component
KF10N60F-U
Public Made by Adomby adom
KEC Semicon MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownKF10N60F-U
KEC Semicon · MOSFETs · TO-220AB
KF10N60F-U from KEC Semicon, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal; gate-source voltage is rated at ±30V maximum, with a gate threshold of 2.5V to 4.5V. |
| 2 | DRAIN | passive | Drain terminal; drain-source voltage is rated at 600V and continuous drain current is 10A (limited by maximum junction temperature). |
| 3 | SOURCE | passive | Source terminal; continuous source (body diode) current is 10A and pulsed source current is 40A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KEC Semicon |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 600 | V | 1 | |||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Drain Current | ID | 10 | A | TC=25°C; *drain current limited by maximum junction temperature | 1 | ||
| Drain Current | ID | 6 | A | TC=100°C; *drain current limited by maximum junction temperature | 1 | ||
| Pulsed Drain Current | IDP | 25 | A | Pulsed (Note 1); *limited by maximum junction temperature | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 360 | mJ | Note 2: L=6.8mH, IS=10A, VDD=50V, RG=25Ω, Starting Tj=25°C | 1 | ||
| Repetitive Avalanche Energy | EAR | 16.5 | mJ | Note 1: pulse width limited by junction temperature | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | Note 3: IS 10A, dI/dt 200A/µs, VDD BVDSS, Starting Tj=25°C | 1 | ||
| Drain Power Dissipation | PD | 46 | W | TC=25°C | 1 | ||
| Derate above 25°C | 0.37 | W/°C | Above TC=25°C (F variant) | 1 | |||
| Maximum Junction Temperature | Tj | 150 | °C | 1 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction-to-Case | RthJC | 2.7 | °C/W | KF10N60F (TO-220IS) column; Fig. 13 states Rth(j-c)=2.7 °C/W Max | 1 | ||
| Breakdown Voltage | BVDSS | 600 | V | ID=250µA, VGS=0V | 2 | ||
| Drain Cut-off Current | IDSS | 10 | µA | VDS=600V, VGS=0V | 2 | ||
| Gate Threshold Voltage | Vth | 2.5 | 4.5 | V | VDS=VGS, ID=250µA | 2 | |
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS=±30V, VDS=0V | 2 | |
| Drain-Source ON Resistance | RDS(ON) | 0.59 | 0.73 | Ω | VGS=10V, ID=5A | 2 | |
| Continuous Source Current | IS | 10 | A | VGS<Vth | 2 | ||
| Pulsed Source Current | ISP | 40 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.4 | V | IS=10A, VGS=0V | 2 | ||
| Breakdown Voltage Temperature Coefficient | BVDSS/Tj | 0.6 | V/°C | ID=250µA, Referenced to 25°C | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RthJA | 62.5 | °C/W | F variant column; no min/typ/max designation printed | 1 |
CAD (KiCad official)
- Symbol:
KF10N60F-U - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
kf10n60f-u-etched.step/kf10n60f-u-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);kf10n60f-u.step/kf10n60f-u.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KEC Semicon datasheet (7 pp, sha256
32a7894456fae204, retrieved 2026-10-14, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).