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HSU6014
Public Made by Adomby adom
HUASHUO MOSFETs, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHSU6014
HUASHUO · MOSFETs · TO-252-2
HSU6014 from HUASHUO, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±20 V, with a threshold VGS(th) of 1.0 V min to 2.5 V max at ID=250uA. |
| 2 | D | passive | Drain, the mounting tab and short center stub; drain-source voltage is rated at 60 V with 20 A continuous drain current at TC=25℃. |
| 3 | S | passive | Source; continuous source current is rated at 20 A and pulsed source current at 40 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | TO-252-2 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 20 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 13 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TA=25℃ | 5 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TA=70℃ | 4 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 40 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 22 | mJ | Note 3: VDD=25V,VGS=10V,L=0.1mH,IAS=21A | 1 | ||
| Avalanche Current | IAS | 21 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 31.3 | W | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 2 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 62 | ℃/W | Note 1: surface mounted on 1 inch2 FR-4 board with 2OZ copper | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 4 | ℃/W | Note 1: surface mounted on 1 inch2 FR-4 board with 2OZ copper | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250uA | 2 | ||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | 0.044 | V/℃ | Reference to 25℃, ID=1mA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 33 | 40 | mΩ | VGS=10V, ID=15A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 40 | 50 | mΩ | VGS=4.5V, ID=7A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.7 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| VGS(th) Temperature Coefficient | △VGS(th) | -4.8 | mV/℃ | 2 | |||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=48V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=48V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Forward Transconductance | gfs | 25.3 | S | VDS=5V, ID=15A | 2 | ||
| Gate Resistance | Rg | 2.5 | VDS=0V, VGS=0V, f=1MHz | 2 | |||
| Total Gate Charge (10V) | Qg | 19 | nC | VDS=48V, VGS=10V, ID=15A | 2 | ||
| Gate-Source Charge | Qgs | 2.5 | nC | VDS=48V, VGS=10V, ID=15A | 2 | ||
| Gate-Drain Charge | Qgd | 5 | nC | VDS=48V, VGS=10V, ID=15A | 2 | ||
| Turn-On Delay Time | Td(on) | 2.8 | ns | VDD=30V, VGS=10V, RG=3.3, ID=15A | 2 | ||
| Rise Time | Tr | 16.6 | ns | VDD=30V, VGS=10V, RG=3.3, ID=15A | 2 | ||
| Turn-Off Delay Time | Td(off) | 21.2 | ns | VDD=30V, VGS=10V, RG=3.3, ID=15A | 2 | ||
| Fall Time | Tf | 5.6 | ns | VDD=30V, VGS=10V, RG=3.3, ID=15A | 2 | ||
| Input Capacitance | Ciss | 1027 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 65 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 46 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | ||
| Continuous Source Current | IS | 20 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | 40 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Reverse Recovery Time | trr | 12.2 | nS | IF=15A, dI/dt=100A/µs, TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 7.3 | nC | IF=15A, dI/dt=100A/µs, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
HSU6014 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2 (KiCad packages3D, STEP)
- 3D model files:
hsu6014-etched.step/hsu6014-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsu6014.step/hsu6014.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
46377e92d447488f, retrieved 2026-10-10, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).