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IKY40N120CS6
Public Made by Adomby adom
Infineon Technologies IGBT Transistors / Modules, TO-247-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIKY40N120CS6
Infineon Technologies · IGBT Transistors / Modules · TO-247-4
IKY40N120CS6 from Infineon Technologies, in a TO-247-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C | passive | Collector of the IGBT (cathode of the anti-parallel diode), rated 1200V collector-emitter voltage and 40A DC at Tc=100°C. |
| 2 | E | passive | Power emitter connection carrying the main collector current (up to 40A DC at Tc=100°C), with 13nH internal emitter inductance. |
| 3 | K | passive | Kelvin emitter (driver return) pin for the gate drive reference, separate from the power emitter. |
| 4 | G | input | Gate input of the IGBT, with gate-emitter voltage of ±20V (25V transient for tp ≤0.5µs) and threshold of 5.1V to 6.3V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-4 |
| Category | Transistors/Thyristors |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter saturation voltage | VCEsat | 1.85 | 2.15 | V | VGE=15.0V, IC=40.0A, Tvj=25°C | 4 | |
| Collector-emitter saturation voltage | VCEsat | 2.15 | V | VGE=15.0V, IC=40.0A, Tvj=125°C | 4 | ||
| Collector-emitter saturation voltage | VCEsat | 2.25 | V | VGE=15.0V, IC=40.0A, Tvj=175°C | 4 | ||
| Diode forward voltage | VF | 2.2 | 2.55 | V | VGE=0V, IF=40.0A, Tvj=25°C | 4 | |
| Diode forward voltage | VF | 2.25 | V | VGE=0V, IF=40.0A, Tvj=175°C | 4 | ||
| Gate-emitter threshold voltage | VGE(th) | 5.1 | 5.7 | 6.3 | V | IC=1.90mA, VCE=VGE | 4 |
| Zero gate voltage collector current | ICES | 1600 | µA | VCE=1200V, VGE=0V, Tvj=25°C | 4 | ||
| Zero gate voltage collector current | ICES | 850 | µA | VCE=1200V, VGE=0V, Tvj=175°C | 4 | ||
| Gate-emitter leakage current | IGES | 600 | nA | VCE=0V, VGE=20V | 4 | ||
| Collector-emitter voltage | VCE | 1200 | V | Tvj ≥25°C | 3 | ||
| DC collector current | IC | 80 | A | Tc=25°C, limited by Tvjmax | 3 | ||
| DC collector current | IC | 40 | A | Tc=100°C, limited by Tvjmax | 3 | ||
| Pulsed collector current | ICpuls | 160 | A | tp limited by Tvjmax | 3 | ||
| Turn off safe operating area | 160 | A | VCE ≤1200V, Tvj ≤175°C | 3 | |||
| Diode forward current | IF | 80 | A | Tc=25°C, limited by Tvjmax | 3 | ||
| Diode forward current | IF | 40 | A | Tc=100°C, limited by Tvjmax | 3 | ||
| Diode pulsed current | IFpuls | 160 | A | tp limited by Tvjmax | 3 | ||
| Gate-emitter voltage | VGE | -20 | 20 | V | 3 | ||
| Transient gate-emitter voltage | VGE | -25 | 25 | V | tp ≤0.5µs, D<0.001 | 3 | |
| Power dissipation | Ptot | 500 | W | Tc=25°C | 3 | ||
| Power dissipation | Ptot | 250 | W | Tc=100°C | 3 | ||
| Operating junction temperature | Tvj | -40 | 175 | °C | 3 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 3 | ||
| Soldering temperature | 260 | °C | wave soldering 1.6mm (0.063in.) from case for 10s | 3 | |||
| IGBT thermal resistance, junction-case | Rth(j-c) | 0.3 | K/W | 3 | |||
| Diode thermal resistance, junction-case | Rth(j-c) | 0.78 | K/W | 3 | |||
| Thermal resistance junction-ambient | Rth(j-a) | 40 | K/W | 3 | |||
| Transconductance | gfs | 32 | S | VCE=20V, IC=40.0A | 4 | ||
| Input capacitance | Cies | 2700 | pF | VCE=25V, VGE=0V, f=1MHz | 4 | ||
| Output capacitance | Coes | 185 | pF | VCE=25V, VGE=0V, f=1MHz | 4 | ||
| Reverse transfer capacitance | Cres | 120 | pF | VCE=25V, VGE=0V, f=1MHz | 4 | ||
| Gate charge | QG | 285 | nC | VCC=960V, IC=40.0A, VGE=15V | 4 | ||
| Internal emitter inductance | LE | 13 | nH | measured 5mm (0.197 in.) from case | 4 | ||
| Turn-on delay time | td(on) | 27 | ns | Tvj=25°C, VCC=600V, IC=40.0A, VGE=0.0/15.0V, RG(on)=9.0Ω, RG(off)=9.0Ω | 4 | ||
| Rise time | tr | 27 | ns | Tvj=25°C, VCC=600V, IC=40.0A, VGE=0.0/15.0V, RG(on)=9.0Ω, RG(off)=9.0Ω | 4 | ||
| Turn-off delay time | td(off) | 315 | ns | Tvj=25°C, VCC=600V, IC=40.0A, VGE=0.0/15.0V, RG(on)=9.0Ω, RG(off)=9.0Ω | 4 | ||
| Fall time | tf | 27 | ns | Tvj=25°C, VCC=600V, IC=40.0A, VGE=0.0/15.0V, RG(on)=9.0Ω, RG(off)=9.0Ω | 4 | ||
| Turn-on energy | Eon | 1.45 | mJ | Tvj=25°C, VCC=600V, IC=40.0A, VGE=0.0/15.0V, RG(on)=9.0Ω | 4 | ||
| Turn-off energy | Eoff | 1.55 | mJ | Tvj=25°C, VCC=600V, IC=40.0A, VGE=0.0/15.0V, RG(off)=9.0Ω | 4 | ||
| Total switching energy | Ets | 3 | mJ | Tvj=25°C, VCC=600V, IC=40.0A, VGE=0.0/15.0V | 4 | ||
| Diode reverse recovery time | trr | 255 | ns | Tvj=25°C, VR=600V, IF=40.0A, diF/dt=1650A/µs | 5 | ||
| Diode reverse recovery charge | Qrr | 2.6 | µC | Tvj=25°C, VR=600V, IF=40.0A, diF/dt=1650A/µs | 5 | ||
| Diode peak reverse recovery current | Irrm | 39 | A | Tvj=25°C, VR=600V, IF=40.0A, diF/dt=1650A/µs | 5 | ||
| Diode peak rate of fall of reverse recovery current | dirr/dt | -450 | A/µs | Tvj=25°C, VR=600V, IF=40.0A, diF/dt=1650A/µs | 5 | ||
| Turn-on delay time | td(on) | 27 | ns | Tvj=175°C, VCC=600V, IC=40.0A, VGE=0.0/15.0V, RG(on)=9.0Ω, RG(off)=9.0Ω | 5 | ||
| Rise time | tr | 29 | ns | Tvj=175°C, VCC=600V, IC=40.0A, VGE=0.0/15.0V, RG(on)=9.0Ω, RG(off)=9.0Ω | 5 | ||
| Turn-off delay time | td(off) | 390 | ns | Tvj=175°C, VCC=600V, IC=40.0A, VGE=0.0/15.0V, RG(on)=9.0Ω, RG(off)=9.0Ω | 5 | ||
| Fall time | tf | 55 | ns | Tvj=175°C, VCC=600V, IC=40.0A, VGE=0.0/15.0V, RG(on)=9.0Ω, RG(off)=9.0Ω | 5 | ||
| Turn-on energy | Eon | 2.05 | mJ | Tvj=175°C, VCC=600V, IC=40.0A, VGE=0.0/15.0V, RG(on)=9.0Ω | 5 | ||
| Turn-off energy | Eoff | 2.95 | mJ | Tvj=175°C, VCC=600V, IC=40.0A, VGE=0.0/15.0V, RG(off)=9.0Ω | 5 | ||
| Total switching energy | Ets | 5 | mJ | Tvj=175°C, VCC=600V, IC=40.0A, VGE=0.0/15.0V | 5 | ||
| Diode reverse recovery time | trr | 360 | ns | Tvj=175°C, VR=600V, IF=40.0A, diF/dt=1650A/µs | 5 | ||
| Diode reverse recovery charge | Qrr | 5.3 | µC | Tvj=175°C, VR=600V, IF=40.0A, diF/dt=1650A/µs | 5 | ||
| Diode peak reverse recovery current | Irrm | 53 | A | Tvj=175°C, VR=600V, IF=40.0A, diF/dt=1650A/µs | 5 | ||
| Diode peak rate of fall of reverse recovery current | dirr/dt | -580 | A/µs | Tvj=175°C, VR=600V, IF=40.0A, diF/dt=1650A/µs | 5 |
CAD (KiCad official)
- Symbol:
IKY40N120CS6 - Footprint:
Package_TO_SOT_THT:TO-247-4_Vertical - 3D model: TO-247-4 (KiCad packages3D, STEP)
- 3D model files:
iky40n120cs6-etched.step/iky40n120cs6-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);iky40n120cs6.step/iky40n120cs6.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (16 pp, sha256
eaefc40c52571bf9, retrieved 2026-10-30, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).