component
4616
Public Made by Adomby adom
HL MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown4616
HL · MOSFETs · SOP-8
4616 from HL, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (pin 1 in the SOP8 diagram); the datasheet gives VDS of 30V (N-ch) or -30V (P-ch) and VGS of ±20V for the device. |
| 2 | G1 | input | Gate of MOSFET 1 (pin 2 in the SOP8 diagram); the datasheet gives a gate-source voltage limit of ±20V. |
| 3 | S2 | passive | Source of MOSFET 2 (pin 3 in the SOP8 diagram); the datasheet gives VDS of 30V (N-ch) or -30V (P-ch) and VGS of ±20V for the device. |
| 4 | G2 | input | Gate of MOSFET 2 (pin 4 in the SOP8 diagram); the datasheet gives a gate-source voltage limit of ±20V. |
| 5 | D2 | passive | Drain of MOSFET 2, shorted to pin 6 (D2); the datasheet gives a continuous drain current of 7A (N-ch) or -8.5A (P-ch) and a pulsed current of 20A (N-ch) or -28A (P-ch). |
| 6 | D2 | passive | Drain of MOSFET 2, shorted to pin 5 (D2); the datasheet gives a continuous drain current of 7A (N-ch) or -8.5A (P-ch) and a pulsed current of 20A (N-ch) or -28A (P-ch). |
| 7 | D1 | passive | Drain of MOSFET 1, shorted to pin 8 (D1); the datasheet gives a continuous drain current of 7A (N-ch) or -8.5A (P-ch) and a pulsed current of 20A (N-ch) or -28A (P-ch). |
| 8 | D1 | passive | Drain of MOSFET 1, shorted to pin 7 (D1); the datasheet gives a continuous drain current of 7A (N-ch) or -8.5A (P-ch) and a pulsed current of 20A (N-ch) or -28A (P-ch). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HL |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-ch Drain-Source Voltage | VDS | 30 | V | 1 | |||
| P-ch Drain-Source Voltage | VDS | -30 | V | 1 | |||
| N-ch Gate-Source Voltage | VGS | 20 | V | 1 | |||
| P-ch Gate-Source Voltage | VGS | 20 | V | 1 | |||
| N-ch Continuous Drain Current | ID | 7 | A | @T=25℃, V_GS@10V | 1 | ||
| P-ch Continuous Drain Current | ID | -8.5 | A | @T=25℃, V_GS@10V | 1 | ||
| N-ch Continuous Drain Current | ID | 6 | A | @T=100℃, V_GS@10V | 1 | ||
| P-ch Continuous Drain Current | ID | -4.6 | A | @T=100℃, V_GS@10V | 1 | ||
| N-ch Pulsed Drain Current | IDM | 20 | A | 1 | |||
| P-ch Pulsed Drain Current | IDM | -28 | A | 1 | |||
| N-ch Single Pulse Avalanche Energy | EAS | 72 | mJ | 1 | |||
| P-ch Single Pulse Avalanche Energy | EAS | 62 | mJ | 1 | |||
| N-ch Avalanche Current | IAS | 21 | A | 1 | |||
| P-ch Avalanche Current | IAS | -19 | A | 1 | |||
| N-ch Total Power Dissipation | PD | 2.5 | W | @T=25℃ | 1 | ||
| P-ch Total Power Dissipation | PD | 3.08 | W | @T=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | N-ch and P-ch | 1 | |
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | N-ch and P-ch | 1 | |
| Thermal Resistance Junction-Ambient | RθJA | 45 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 30 | ℃/W | 1 | |||
| N-ch Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| N-ch Drain-Source On-Resistance | RDS(ON) | 18 | 25 | mΩ | VGS=10V, ID=6A | 2 | |
| N-ch Drain-Source On-Resistance | RDS(ON) | 25 | 31 | mΩ | VGS=4.5V, ID=5A | 2 | |
| N-ch Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS=VGS, ID=250uA | 2 |
| N-ch Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=30V, VGS=0V, TJ=25℃ | 2 | ||
| N-ch Zero Gate Voltage Drain Current | IDSS | 5 | uA | VDS=30V, VGS=0V, TJ=55℃ | 2 | ||
| N-ch Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V (printed ±100) | 2 | |
| N-ch Continuous Diode Forward Current | IS | 7 | A | VG=VD=0V, Force Current | 2 | ||
| N-ch Pulsed Diode Forward Current | ISM | 20 | A | VG=VD=0V, Force Current | 2 | ||
| N-ch Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=5A, TJ=25℃ | 2 | ||
| P-ch Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V (printed ±100) | 3 | |
| P-ch Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -2.5 | V | VDS=VGS, ID=-250μA | 3 |
| P-ch Static Drain-Source On-Resistance | RDS(ON) | 26 | 35 | mΩ | VGS=-10V, ID=-7A | 3 | |
| P-ch Static Drain-Source On-Resistance | RDS(ON) | 38 | 54 | mΩ | VGS=-4.5V, ID=-4A | 3 | |
| P-ch Maximum Continuous Diode Forward Current | IS | -8.5 | A | 3 | |||
| P-ch Maximum Pulsed Diode Forward Current | ISM | -28 | A | 3 | |||
| P-ch Diode Forward Voltage | VSD | -0.8 | -1.2 | V | VGS=0V, IS=-7A | 3 |
CAD (KiCad official)
- Symbol:
4616 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
4616-etched.step/4616-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);4616.step/4616.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HL datasheet (8 pp, sha256
63f4e265e6067e2b, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).