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STN2610D-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTN2610D-HXY
HXY MOSFET · MOSFETs · TO-252-2L
STN2610D-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, with a gate-source voltage rating of VGS ±20 V. |
| 2 | D | passive | Drain of the N-channel MOSFET, rated for a drain-source voltage VDS of 60 V and a continuous drain current ID of 50 A at TC=25℃ (VGS @ 10V). |
| 3 | S | passive | Source of the N-channel MOSFET, with a continuous source current IS limited to 35 A and a pulsed source current ISM limited to 80 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current at TC=25℃ | ID@TC=25℃ | 50 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current at TC=100℃ | ID@TC=100℃ | 25 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 90 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 39.2 | mJ | 1 | |||
| Avalanche Current | IAS | 28 | A | 1 | |||
| Total Power Dissipation at TC=25℃ | PD@TC=25℃ | 45 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 2.8 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V , ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 11 | 15 | mΩ | VGS=10V , ID=20A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 15 | 20 | mΩ | VGS=4.5V , ID=10A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 2.5 | V | VGS=VDS , ID =250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=48V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=48V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Continuous Source Current | IS | 35 | A | VG=VD=0V , Force Current | 2 | ||
| Pulsed Source Current | ISM | 80 | A | 2 | |||
| Diode Forward Voltage | VSD | 1 | V | VGS=0V , IS=A , TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
STN2610D-HXY - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
stn2610d-hxy-etched.step/stn2610d-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stn2610d-hxy.step/stn2610d-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
87f72c02bc2bbff3, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).