component
DMN26D0UT-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SOT-523. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownDMN26D0UT-7
Diodes Incorporated · MOSFETs · SOT-523
DMN26D0UT-7 from Diodes Incorporated, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, ESD-protected by an internal gate protection diode, with VGSS rated ±10 V and gate threshold VGS(th) of 0.5 V min to 1.0 V max. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, with the body diode running to the drain and drain current ID of 230 mA. |
| 3 | D | passive | Drain terminal of the N-channel MOSFET, rated VDSS 20 V with ID 230 mA and pulsed IDM 805 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-523 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain Source Voltage | VDSS | 20 | V | 1 | |||
| Gate-Source Voltage | VGSS | -10 | 10 | V | 1 | ||
| Drain Current | ID | 230 | mA | Note 1 | 1 | ||
| Pulsed Drain Current | IDM | 805 | mA | TP = 10µs | 1 | ||
| Total Power Dissipation | PD | 300 | mW | Note 1 | 1 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 417 | °C/W | Note 1 (FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout) | 1 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0V, ID = 100μA | 2 | ||
| Zero Gate Voltage Drain Current @ TC = 25°C | IDSS | 500 | nA | VDS = 20V, VGS = 0V | 2 | ||
| Gate-Body Leakage | IGSS | -1 | 1 | μA | VGS = ±10V, VDS = 0V | 2 | |
| Gate-Body Leakage | IGSS | -500 | 500 | nA | VGS = ±8V, VDS = 0V | 2 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VGS = ±5V, VDS = 0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 1 | V | VDS = VGS, ID = 250μA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 1.8 | 3 | Ω | VGS = 4.5V, ID = 100mA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 2.4 | 4 | Ω | VGS = 2.5V, ID = 50mA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 2.9 | 6 | Ω | VGS = 1.8V, ID = 20mA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 3.7 | 10 | Ω | VGS = 1.5V, ID = 10mA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 5.4 | 15 | Ω | VGS = 1.2V, ID = 1mA | 2 | |
| Source-Drain Diode Forward Voltage | VSD | 0.5 | 1 | V | VGS = 0V, IS = 115mA | 2 | |
| Thermal Resistance, Junction to Ambient (figure note) | RθJA | 278 | °C/W | Fig. 11 note: R θJA = 278°C/W, used to derive transient thermal response r(t) | 4 |
CAD (KiCad official)
- Symbol:
DMN26D0UT-7 - Footprint:
Package_TO_SOT_SMD:SOT-523 - 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
dmn26d0ut-7-etched.step/dmn26d0ut-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn26d0ut-7.step/dmn26d0ut-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (6 pp, sha256
f57c02ae6172d218, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).