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LBTP560Y3T1G

Public Made by Adom

by adom

LRC Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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LBTP560Y3T1G

LRC · Bipolar (BJT) · SOT-89

LBTP560Y3T1G from LRC, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the PNP transistor; emitter-base voltage limited to -7 V (VEBO) with DC current gain 100-300 at VCE=-1 V, IC=-2 A.
2 C passive Collector of the PNP transistor (also the package tab); VCEO -60 V, VCBO -100 V, continuous IC -4.3 A, peak ICM -15 A (tp ≤ 1 ms).
3 E passive Emitter of the PNP transistor, marked with the arrow in the symbol; VEBO -7 V relative to base.

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO -60 V 1
Collector-Base Voltage VCBO -100 V 1
Emitter-Base Voltage VEBO -7 V 1
Collector Current, Continuous IC -4.3 A 1
Peak Collector Current ICM -15 A tp ≤ 1 ms 1
Junction and Storage Temperature TJ,Tstg -55 150 ºC 1
Total Device Dissipation PD 550 mW FR-4 Board (Note 1), TA = 25ºC; PCB 30.0mm×25.0mm×1.6mm 1
Derate above 25ºC 4.4 mW/ºC above 25ºC 1
Thermal Resistance, Junction-to-Ambient RΘJA 225 ºC/W 1
Collector Cutoff Current ICBO -30 nA VCB = -80V, IE = 0 2
Emitter Cutoff Current IEBO -30 nA VEB = -6 V, IC = 0 2
Collector-Emitter Cutoff Current ICEO -10 µA VCE = -60V, IB = 0 2
Collector-Emitter Breakdown Voltage VBR(CEO) -60 V IC = -10 mA, IB = 0 2
Collector-Base Breakdown Voltage VBR(CBO) -100 V IC = -100 µA, IE = 0 2
Emitter-Base Breakdown Voltage VBR(EBO) -7 V IE = -100 µA, IC = 0 2
Collector-Emitter Saturation Voltage VCE(sat) -14 -20 mV IC = -0.1 A, IB = -10 mA 2
Collector-Emitter Saturation Voltage VCE(sat) -50 -65 mV IC = -1 A, IB = -100 mA 2
Collector-Emitter Saturation Voltage VCE(sat) -75 -110 mV IC = -2 A, IB = -200 mA 2
Collector-Emitter Saturation Voltage VCE(sat) -160 -240 mV IC = -5 A, IB = -500 mA 2
Base-Emitter Saturation Voltage VBE(sat) -0.95 -1.05 V IC = -5 A, IB = -500 mA 2
Base-Emitter Turn-On Voltage VBE(on) -0.84 -0.95 V VCE = -1 V, IC = -5 A 2

CAD (KiCad official)

  • Symbol: LBTP560Y3T1G
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: lbtp560y3t1g-etched.step / lbtp560y3t1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lbtp560y3t1g.step / lbtp560y3t1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (6 pp, sha256 e0f47e3859e431d1, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF