component
IRFH5302DPBF-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownIRFH5302DPBF-HXY
HXY MOSFET · MOSFETs · DFN5x6-8L
IRFH5302DPBF-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal, pin 1 of the DFN5X6-8L; continuous drain current is rated 150A at TC=25C, with a package limit of 85A. |
| 2 | S | passive | Source terminal, tied in parallel with the other source pins; continuous source current is rated 150A, with a package limit of 85A. |
| 3 | S | passive | Source terminal, tied in parallel with the other source pins; the body diode forward voltage is at most 1.2V at IS=1A. |
| 4 | G | input | Gate terminal; gate-source voltage is rated ±20V, the threshold is 1.2V to 2.5V, and the device operates with gate drive as low as 4.5V. |
| 5 | D | passive | Drain terminal; drain-source voltage is rated 30V and continuous drain current is 150A at TC=25C. |
| 6 | D | passive | Drain terminal, tied in parallel with the other drain pins; pulsed drain current is rated 160A. |
| 7 | D | passive | Drain terminal, tied in parallel with the other drain pins; RDS(ON) is at most 2.4mΩ at VGS=10V, ID=30A. |
| 8 | D | passive | Drain terminal, tied in parallel with the other drain pins; drain-source breakdown voltage is at least 30V at ID=250uA. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5x6-8L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
CAD (KiCad official)
- Symbol:
IRFH5302DPBF-HXY - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files:
irfh5302dpbf-hxy-etched.step/irfh5302dpbf-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfh5302dpbf-hxy.step/irfh5302dpbf-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
871d05b1c86a3c64, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).