component

SI2301B

Public Made by Adom

by adom

YONGYUTAI MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorssi2301bfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

SI2301B

YONGYUTAI · MOSFETs · SOT-23

SI2301B from YONGYUTAI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±12 V, with threshold VGS(th) of -0.3 V min, -0.7 V typ and -1.5 V max at ID=-250μA.
2 S passive Source of the P-channel MOSFET; continuous source current is -2.5 A max and pulsed source current is -10 A max.
3 D passive Drain, the single lead on one side of the package; VDS is -20 V max, continuous ID is -2.5 A at TC=25℃ and pulsed IDM is -10 A.

Key specifications

Parameter Value
Manufacturer YONGYUTAI
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -12 12 V 1
Drain Current - Continuous ID -2.5 A TC=25℃ 1
Drain Current - Continuous ID -1.6 A TC=100℃ 1
Drain Current - Pulsed IDM1 -10 A 1
Power Dissipation PD 1 W TC=25℃ 1
Power Dissipation - Derate above 25℃ 0.008 W/℃ above 25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range Tj -55 150 ℃ 1
Drain to Source Breakdown Voltage BVDSS -20 V VGS=0V, ID=-250μA 2
Drain-Source Leakage Current IDSS -1 μA VDS=-20V, VGS=0V, TJ=25℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VDS=0V, VGS=±12V 2
Static Drain-Source On-Resistance RDS(ON) 80 104 mΩ VGS=-4.5V, ID=-2.5A 2
Static Drain-Source On-Resistance RDS(ON) 110 154 mΩ VGS=-2.5V, ID=-1.5A 2
Gate Threshold Voltage VGS(th) -0.3 -0.7 -1.5 V VDS=VGS, ID=-250μA 2
Continuous Source Current IS -2.5 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM -10 A 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-2.5A, TJ=25℃ 2
Total Gate Charge Qg 2.9 nC VDS=-10V, VGS=-4.5V, ID=-2.5A 2
Gate-Source Charge Qgs 0.45 nC 2
Gate-Drain Charge Qgd 0.75 nC 2
Turn-on Delay Time Td(on) 9.8 nS VDD=-10V, VGEN=-4.5V, RGEN=3Ω, RL=5Ω 2
Turn-on Rise Time Tr 4.9 nS 2
Turn-off Delay Time Td(off) 20.5 nS 2
Turn-off Fall Time Tf 7 nS 2
Input Capacitance Ciss 248 pF VDS=-10V, VGS=0V, F=1MHz 2
Output Capacitance Coss 42 pF 2
Reverse Transfer Capacitance Crss 31 pF 2
Thermal Resistance Junction to Ambient RθJA 125 ℃/W 1

CAD (KiCad official)

  • Symbol: SI2301B
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: si2301b-etched.step / si2301b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2301b.step / si2301b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: YONGYUTAI datasheet (5 pp, sha256 8d5552a9356a0c14, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF