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SSM6L35FU-VB
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VBsemi Elec MOSFETs, SC-70-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
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Datasheet
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README
markdownSSM6L35FU-VB
VBsemi Elec · MOSFETs · SC-70-6
SSM6L35FU-VB from VBsemi Elec, in a SC-70-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (20 V VDS, 3.28 A at 5 s, RDS(on) 0.090 Ω at VGS = 4.5 V). |
| 2 | G1 | input | Gate of the N-channel MOSFET (VGS ±20 V max, 1.8 V rated drive, VGS(th) 0.45 V min to 1 V max). |
| 3 | D2 | passive | Drain of the P-channel MOSFET (VDS -20 V, ID -2.80 A at 5 s, RDS(on) 0.155 Ω at VGS = -4.5 V). |
| 4 | S2 | passive | Source of the P-channel MOSFET (VDS -20 V, continuous source current -1.61 A at 5 s). |
| 5 | G2 | input | Gate of the P-channel MOSFET (VGS ±20 V max, 1.8 V rated drive, VGS(th) -0.45 V to -1 V). |
| 6 | D1 | passive | Drain of the N-channel MOSFET (VDS 20 V, ID 3.28 A at 5 s, pulsed IDM 9.5 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SC-70-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-Ch Gate Threshold Voltage | VGS(th) | 0.45 | 1 | V | VDS = VGS, ID = 100 µA | 2 | |
| P-Ch Gate Threshold Voltage | VGS(th) | -1 | -0.45 | V | VDS = VGS, ID = -100 µA | 2 | |
| N-Ch Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 8 V | 2 | |
| P-Ch Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 8 V | 2 | |
| N-Ch Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 16 V, VGS = 0 V | 2 | ||
| P-Ch Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -16 V, VGS = 0 V | 2 | ||
| N-Ch Zero Gate Voltage Drain Current, 85 °C | IDSS | 5 | µA | VDS = 16 V, VGS = 0 V, TJ = 85 °C | 2 | ||
| P-Ch Zero Gate Voltage Drain Current, 85 °C | IDSS | -5 | µA | VDS = -16 V, VGS = 0 V, TJ = 85 °C | 2 | ||
| N-Ch On-State Drain Current | ID(on) | 2 | A | VDS ≥ 5 V, VGS = 4.5 V | 2 | ||
| P-Ch On-State Drain Current | ID(on) | -2 | A | VDS ≤ -5 V, VGS = -4.5 V | 2 | ||
| N-Ch Drain-Source On-State Resistance | RDS(on) | 0.09 | Ω | VGS = 4.5 V, ID = 2.55 A | 2 | ||
| N-Ch Drain-Source On-State Resistance | RDS(on) | 0.11 | Ω | VGS = 2.5 V, ID = 1.55 A | 2 | ||
| N-Ch Drain-Source On-State Resistance | RDS(on) | 0.13 | Ω | VGS = 1.8 V, ID = 0.50 A | 2 | ||
| P-Ch Drain-Source On-State Resistance | RDS(on) | 0.155 | Ω | VGS = -4.5 V, ID = -1.85 A | 2 | ||
| P-Ch Drain-Source On-State Resistance | RDS(on) | 0.19 | Ω | VGS = -2.5 V, ID = -1.35 A | 2 | ||
| P-Ch Drain-Source On-State Resistance | RDS(on) | 0.22 | Ω | VGS = -1.8 V, ID = -0.50 A | 2 | ||
| N-Ch Diode Forward Voltage | VSD | 0.8 | 1.2 | V | IS = 0.48 A, VGS = 0 V | 2 | |
| P-Ch Diode Forward Voltage | VSD | -1.2 | -0.8 | V | IS = -0.48 A, VGS = 0 V | 2 | |
| N-Ch Total Gate Charge | Qg | 1.25 | 2 | nC | VDS = 10 V, VGS = 4.5 V, ID = 2.55 A | 2 | |
| P-Ch Total Gate Charge | Qg | 1.2 | 1.8 | nC | VDS = -10 V, VGS = -4.5 V, ID = -0.88 A | 2 | |
| N-Ch Turn-On Delay Time | td(on) | 15 | 25 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω | 2 | |
| P-Ch Turn-On Delay Time | td(on) | 18 | 30 | ns | VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 6 Ω | 2 | |
| N-Ch Rise Time | tr | 22 | 35 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω | 2 | |
| P-Ch Rise Time | tr | 25 | 40 | ns | VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 6 Ω | 2 | |
| N-Ch Turn-Off Delay Time | td(off) | 25 | 40 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω | 2 | |
| P-Ch Turn-Off Delay Time | td(off) | 15 | 25 | ns | VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 6 Ω | 2 | |
| N-Ch Fall Time | tf | 12 | 20 | ns | VDD = 10 V, RL = 20 Ω, ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω | 2 | |
| P-Ch Fall Time | tf | 12 | 20 | ns | VDD = -10 V, RL = 20 Ω, ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 6 Ω | 2 | |
| N-Ch Reverse Recovery Time | trr | 30 | 60 | ns | IF = 0.48 A, dI/dt = 100 A/µs | 2 | |
| P-Ch Reverse Recovery Time | trr | 30 | 60 | ns | IF = 0.48 A, dI/dt = 100 A/µs | 2 | |
| N-Ch Forward Transconductance | gfs | 2.6 | S | VDS = 10 V, ID = 1.13 A | 2 | ||
| P-Ch Forward Transconductance | gfs | 1.5 | S | VDS = -10 V, ID = -0.88 A | 2 | ||
| Drain-Source Voltage (N-Ch) | VDS | 20 | V | TA = 25 °C | 1 | ||
| Drain-Source Voltage (P-Ch) | VDS | -20 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage (N-Ch) | VGS | -20 | 20 | V | TA = 25 °C | 1 | |
| Gate-Source Voltage (P-Ch) | VGS | -20 | 20 | V | TA = 25 °C | 1 | |
| N-Ch Continuous Drain Current, 5 s | ID | 3.28 | A | TJ = 150 °C, TA = 25 °C, 5 s | 1 | ||
| N-Ch Continuous Drain Current, steady state | ID | 3.03 | A | TJ = 150 °C, TA = 25 °C | 1 | ||
| P-Ch Continuous Drain Current, 5 s | ID | -2.8 | A | TJ = 150 °C, TA = 25 °C, 5 s | 1 | ||
| P-Ch Continuous Drain Current, steady state | ID | -2.58 | A | TJ = 150 °C, TA = 25 °C | 1 | ||
| N-Ch Continuous Drain Current, 5 s, 85 °C | ID | 2.12 | A | TJ = 150 °C, TA = 85 °C, 5 s | 1 | ||
| N-Ch Continuous Drain Current, steady state, 85 °C | ID | 1.81 | A | TJ = 150 °C, TA = 85 °C | 1 | ||
| P-Ch Continuous Drain Current, 5 s, 85 °C | ID | -1.72 | A | TJ = 150 °C, TA = 85 °C, 5 s | 1 | ||
| P-Ch Continuous Drain Current, steady state, 85 °C | ID | -1.53 | A | TJ = 150 °C, TA = 85 °C | 1 | ||
| N-Ch Pulsed Drain Current | IDM | 9.5 | A | 1 | |||
| P-Ch Pulsed Drain Current | IDM | -8.5 | A | 1 | |||
| N-Ch Continuous Source Current, 5 s | IS | 2.61 | A | Diode conduction, 5 s | 1 | ||
| N-Ch Continuous Source Current, steady state | IS | 2.48 | A | Diode conduction | 1 | ||
| P-Ch Continuous Source Current, 5 s | IS | -1.61 | A | Diode conduction, 5 s | 1 | ||
| P-Ch Continuous Source Current, steady state | IS | -1.48 | A | Diode conduction | 1 | ||
| N-Ch Maximum Power Dissipation, 5 s | PD | 1.24 | W | TA = 25 °C, 5 s | 1 | ||
| N-Ch Maximum Power Dissipation, steady state | PD | 1.17 | W | TA = 25 °C | 1 | ||
| P-Ch Maximum Power Dissipation, 5 s | PD | 1.1 | W | TA = 25 °C, 5 s | 1 | ||
| P-Ch Maximum Power Dissipation, steady state | PD | 0.97 | W | TA = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance, t ≤ 5 s | RthJA | 130 | 170 | °C/W | t ≤ 5 s | 1 | |
| Junction-to-Ambient Thermal Resistance, steady state | RthJA | 170 | 220 | °C/W | Steady State | 1 | |
| Junction-to-Foot (Drain) Thermal Resistance | RthJF | 80 | 100 | °C/W | Steady State | 1 |
CAD (KiCad official)
- Symbol:
SSM6L35FU-VB - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SC-70-6 (KiCad packages3D, STEP)
- 3D model files:
ssm6l35fu-vb-etched.step/ssm6l35fu-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ssm6l35fu-vb.step/ssm6l35fu-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (10 pp, sha256
0331826c18e956a6, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).