component
DOP40P10
Public Made by Adomby adom
DOINGTER MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownDOP40P10
DOINGTER · MOSFETs · TO-220
DOP40P10 from DOINGTER, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V with threshold VGS(th) of -1 V to -2.5 V. |
| 2 | D | passive | Drain; drain-source voltage -100 V, continuous drain current -40 A (-130 A pulsed). |
| 3 | S | passive | Source; continuous body-diode current IS of -40 A and pulsed -130 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | DOINGTER |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -100 | V | VGS=0V,ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VGS=0V, VDS=-100V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0A | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | -1 | -1.8 | -2.5 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance | RDS(ON) | 40 | 55 | mΩ | VGS=-10V,ID=-15A | 2 | |
| Drain-Source On Resistance | RDS(ON) | 42 | 56 | mΩ | VGS=-4.5V,ID=-10A | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, ISD=-15A | 2 | ||
| Continuous Drain Current (diode) | IS | -40 | A | VD=VG=0V | 2 | ||
| Pulsed Drain Current (diode) | ISM | -130 | A | 2 | |||
| Drain-Source Voltage | VDS | -100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -40 | A | 1 | |||
| Continuous Drain Current | ID | -24 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | -130 | A | Note 1 | 1 | ||
| Power Dissipation | PD | 115 | W | 1 | |||
| Single Pulse Avalanche Energy | EAS | 410 | mJ | Note 2: TJ=25℃, VDD=-50V, VG=-10V, Rg=25Ω, L=0.5mH | 1 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance, Junction to Case | RƟJC | 1.08 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
DOP40P10 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
dop40p10-etched.step/dop40p10-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dop40p10.step/dop40p10.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: DOINGTER datasheet (6 pp, sha256
0dbc93a531f440e3, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).