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MUN5113DW1T1G

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onsemi Digital Transistors, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsmun5113dw1t1gfactory-2.0.0extractor-text
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Contents

README

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MUN5113DW1T1G

onsemi · Digital Transistors · SOT-363

MUN5113DW1T1G from onsemi, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 EMITTER 2 passive Emitter of the second PNP bias resistor transistor (Q2), with the 47 k base-emitter resistor R2 integrated across base and emitter; maximum ratings are common to Q1 and Q2, with VCEO 50 Vdc and continuous IC 100 mAdc.
2 BASE 2 passive Base of Q2 connected to its integrated 47 k series input resistor R1 (typical 47 k, range 32.9 k to 61.1 k); input forward voltage is rated 40 Vdc and input reverse voltage 10 Vdc.
3 COLLECTOR 1 passive Collector of the first PNP bias resistor transistor (Q1); maximum VCBO and VCEO are 50 Vdc and continuous collector current is 100 mAdc.
4 EMITTER 1 passive Emitter of the first PNP bias resistor transistor (Q1), with the 47 k base-emitter resistor R2 integrated across base and emitter.
5 BASE 1 passive Base of Q1 connected to its integrated 47 k series input resistor R1 (typical 47 k, range 32.9 k to 61.1 k); input forward voltage is rated 40 Vdc and input reverse voltage 10 Vdc.
6 COLLECTOR 2 passive Collector of the second PNP bias resistor transistor (Q2); maximum VCBO and VCEO are 50 Vdc and continuous collector current is 100 mAdc.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Cutoff Current ICBO 100 nAdc VCB = 50 V, IE = 0 3
Collector-Emitter Cutoff Current ICEO 500 nAdc VCE = 50 V, IB = 0 3
Emitter-Base Cutoff Current IEBO 0.1 mAdc VEB = 6.0 V, IC = 0 3
Collector-Base Breakdown Voltage V(BR)CBO 50 Vdc IC = 10 A, IE = 0 3
Collector-Emitter Breakdown Voltage V(BR)CEO 50 Vdc IC = 2.0 mA, IB = 0; Note 6 pulsed 3
DC Current Gain hFE 80 140 IC = 5.0 mA, VCE = 10 V; Note 6 pulsed 3
Collector-Emitter Saturation Voltage VCE(sat) 0.25 Vdc IC = 10 mA, IB = 0.3 mA; Note 6 pulsed 3
Output Voltage (on) VOL 0.2 Vdc VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k 3
Output Voltage (off) VOH 4.9 Vdc VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k 3
Input Resistor R1 R1 32.9 47 61.1 k 3
Resistor Ratio R1/R2 0.8 1 1.2 3
Collector-Base Voltage VCBO 50 Vdc TA = 25°C, common for Q1 and Q2 1
Collector-Emitter Voltage VCEO 50 Vdc TA = 25°C, common for Q1 and Q2 1
Collector Current - Continuous IC 100 mAdc TA = 25°C, common for Q1 and Q2 1
Input Forward Voltage VIN(fwd) 40 Vdc TA = 25°C, common for Q1 and Q2 1
Input Reverse Voltage VIN(rev) 10 Vdc TA = 25°C, common for Q1 and Q2 1
Total Device Dissipation, one junction heated PD 187 mW TA = 25°C; Note 1 (FR-4 @ minimum pad) 2
Total Device Dissipation, one junction heated PD 256 mW TA = 25°C; Note 2 (FR-4 @ 1.0 x 1.0 inch pad) 2
Derate above 25°C, one junction heated PD 1.5 mW/°C Note 1 (FR-4 @ minimum pad) 2
Derate above 25°C, one junction heated PD 2 mW/°C Note 2 (FR-4 @ 1.0 x 1.0 inch pad) 2
Thermal Resistance, Junction to Ambient, one junction heated RJA 670 °C/W Note 1 (FR-4 @ minimum pad) 2
Thermal Resistance, Junction to Ambient, one junction heated RJA 490 °C/W Note 2 (FR-4 @ 1.0 x 1.0 inch pad) 2
Total Device Dissipation, both junctions heated PD 250 mW TA = 25°C; Note 1 (FR-4 @ minimum pad); Note 3 2
Total Device Dissipation, both junctions heated PD 385 mW TA = 25°C; Note 2 (FR-4 @ 1.0 x 1.0 inch pad); Note 3 2
Derate above 25°C, both junctions heated PD 2 mW/°C Note 1 (FR-4 @ minimum pad); Note 3 2
Derate above 25°C, both junctions heated PD 3 mW/°C Note 2 (FR-4 @ 1.0 x 1.0 inch pad); Note 3 2
Thermal Resistance, Junction to Ambient, both junctions heated RJA 493 °C/W Note 1 (FR-4 @ minimum pad); Note 3 2
Thermal Resistance, Junction to Ambient, both junctions heated RJA 325 °C/W Note 2 (FR-4 @ 1.0 x 1.0 inch pad); Note 3 2
Thermal Resistance, Junction to Lead RJL 188 °C/W Note 1 (FR-4 @ minimum pad) 2
Thermal Resistance, Junction to Lead RJL 208 °C/W Note 2 (FR-4 @ 1.0 x 1.0 inch pad) 2
Junction and Storage Temperature Range TJ, Tstg -55 150 °C 2

CAD (KiCad official)

  • Symbol: MUN5113DW1T1G
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: mun5113dw1t1g-etched.step / mun5113dw1t1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mun5113dw1t1g.step / mun5113dw1t1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (11 pp, sha256 2940a03d96dfd876, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF