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Contents

README

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MS8001C

miracle · MOSFETs · TO-220

MS8001C from miracle, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with a maximum gate-source voltage of ±20V and a gate threshold voltage of 2.0 to 4.0V.
2 D passive Drain, also connected to the mounting tab; rated for 85V drain-source voltage and 120A continuous current at TC = 25°C.
3 S passive Source; carries up to 120A continuous current at TC = 25°C and is the body-diode anode with a forward voltage up to 1.2V at IS = 50A.

Key specifications

Parameter Value
Manufacturer miracle
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 85 V VGS = 0V, ID = 250μA 1
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 85V, VGS = 0V 1
Forward Gate Body Leakage Current IGSS -100 100 nA VDS = 0V, VGS = ±20V 1
Gate Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-Resistance RDS(on) 4.6 5.5 mΩ VGS = 10V, ID = 20A 2
Diode Forward Continuous Current IS 120 A VG=VD=0V, Force Current 2
Diode Maximum Pulsed Current ISM 480 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 1.2 V VGS = 0V, IS = 50A 2
Drain-Source Voltage VDS 85 V TJ = +25 ℃ to +150 ℃ 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 120 A TC = 25°C 1
Continuous Drain Current ID 87.4 A TC = 100°C 1
Pulsed Drain Current IDM 480 A Repetitive rating; pulse width limited by maximum junction temperature 1
Maximum Power Dissipation PD 173.6 W TJ = 25°C 1
Single Pulsed Avalanche Energy EAS 420 mJ L = 0.5mH, VDD = 50V, IAS = 41A, RG = 25Ω, Starting TJ = 25 ℃ 1
Operating Junction Temperature TJ 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Thermal Resistance, Junction to Case RθJC 0.72 °C/W 1
Thermal Resistance, Junction to Ambient RθJA 62.5 °C/W 1
Input Capacitance Ciss 4021 pF VDS = 40V, VGS = 0V, f = 1MHz 2
Output Capacitance Coss 637 pF VDS = 40V, VGS = 0V, f = 1MHz 2
Reverse Transfer Capacitance Crss 17 pF VDS = 40V, VGS = 0V, f = 1MHz 2
Turn-On Delay Time td(on) 22 ns VDD = 40V, VGS = 10V, ID = 50A, RG = 3Ω 2
Turn-On Rise Time tr 42 ns VDD = 40V, VGS = 10V, ID = 50A, RG = 3Ω 2
Turn-Off Delay Time td(off) 48 ns VDD = 40V, VGS = 10V, ID = 50A, RG = 3Ω 2
Turn-Off Fall Time tf 25 ns VDD = 40V, VGS = 10V, ID = 50A, RG = 3Ω 2
Total Gate Charge Qg 80 nC VDD = 40V, VGS = 10V, ID = 50A 2
Gate-Source Charge Qgs 23 nC VDD = 40V, VGS = 10V, ID = 50A 2
Gate-Drain Charge Qgd 24 nC VDD = 40V, VGS = 10V, ID = 50A 2
Body Diode Reverse Recovery Time Trr 60 ns IS = 20A, di/dt = 100A/μs 2
Body Diode Reverse Recovery Charge Qrr 136 nC IS = 20A, di/dt = 100A/μs 2

CAD (KiCad official)

  • Symbol: MS8001C
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: ms8001c-etched.step / ms8001c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ms8001c.step / ms8001c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: miracle datasheet (6 pp, sha256 ba7d9f36a7c029fb, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF