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NTMFS4927N-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNTMFS4927N-HXY
HXY MOSFET · MOSFETs · DFN5x6-8L
NTMFS4927N-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; pin 1 is the marked reference pin on the package drawing. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, bonded to the source pads of the DFN5X6-8L package. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, bonded to the source pads of the DFN5X6-8L package. |
| 4 | G | input | Gate terminal of the N-channel MOSFET; the datasheet specifies VGS limits of ±20 V and VGS(TH) of 1.0 to 2.5 V. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET, bonded to the drain pads of the DFN5X6-8L package. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET, bonded to the drain pads of the DFN5X6-8L package. |
| 7 | D | passive | Drain terminal of the N-channel MOSFET, bonded to the drain pads of the DFN5X6-8L package. |
| 8 | D | passive | Drain terminal of the N-channel MOSFET, bonded to the drain pads of the DFN5X6-8L package; VDS is rated 30 V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 80 | A | TC=25℃, VGS @ 10V | 1 | ||
| Continuous Drain Current | ID | 45 | A | TC=70℃, VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 280 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 56 | mJ | 1 | |||
| Total Power Dissipation | PD | 37 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 30 | ℃/W | footnote 1 | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 0.1 | μA | VDS=30V,VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | μA | Tj=125℃, VDS=30V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(TH) | 1 | 1.7 | 2.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 6 | mΩ | VGS=10V, ID=20A | 2 | ||
| Drain-Source On-State Resistance | RDS(ON) | 5.4 | 8 | mΩ | VGS=4.5V, ID=16A | 2 | |
| Forward on voltage | VSD | 0.8 | 1.2 | V | ISD=20A,VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
NTMFS4927N-HXY - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files:
ntmfs4927n-hxy-etched.step/ntmfs4927n-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ntmfs4927n-hxy.step/ntmfs4927n-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
d3782dedc84dfd90, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).