component
RD3P050SNTL1
Public Made by Adomby adom
ROHM Semicon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownRD3P050SNTL1
ROHM Semicon · MOSFETs · TO-252
RD3P050SNTL1 from ROHM Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal, with an ESD protection diode to source; gate-source voltage limit is ±20 V. |
| 2 | Drain | passive | Drain terminal (also the tab), with a drain-source voltage rating of 100 V and continuous drain current of ±5.0 A. |
| 3 | Source | passive | Source terminal, with a body diode to drain rated 5.0 A continuous forward current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain - Source voltage | VDSS | 100 | V | 1 | |||
| Continuous drain current | ID | -5 | 5 | A | Limited only by maximum temperature allowed. | 1 | |
| Pulsed drain current | IDP | -20 | 20 | A | Pw≦10μs, Duty cycle≦1% | 1 | |
| Gate - Source voltage | VGSS | -20 | 20 | V | 1 | ||
| Power dissipation | PD | 15 | W | TC=25℃ | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Operating junction and storage temperature range | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction - case | RthJC | 8.33 | ℃/W | TC=25℃ | 2 | ||
| Drain - Source breakdown voltage | V(BR)DSS | 100 | V | VGS = 0V, ID = 1mA | 2 | ||
| Zero gate voltage drain current | IDSS | 10 | μA | VDS = 100V, VGS = 0V | 2 | ||
| Gate - Source leakage current | IGSS | -10 | 10 | μA | VGS = ±20V, VDS = 0V | 2 | |
| Gate threshold voltage | VGS(th) | 1 | 2.5 | V | VDS = 10V, ID = 1mA | 2 | |
| Static drain - source on - state resistance | RDS(on) | 135 | 190 | mΩ | VGS = 10V, ID = 5.0A | 2 | |
| Static drain - source on - state resistance | RDS(on) | 142 | 200 | mΩ | VGS = 4.5V, ID = 5.0A | 2 | |
| Static drain - source on - state resistance | RDS(on) | 145 | 205 | mΩ | VGS = 4.0V, ID = 5.0A | 2 | |
| Forward Transfer Admittance | /Yfs/ | 2.5 | S | VDS = 10V, ID = 5.0A | 2 | ||
| Continuous forward current | IS | 5 | A | Ta = 25℃ | 3 | ||
| Pulse forward current | ISP | 20 | A | Pw≦10μs, Duty cycle≦1% | 3 | ||
| Forward voltage | VSD | 1.2 | V | VGS = 0V, IS = 5.0A | 3 |
CAD (KiCad official)
- Symbol:
RD3P050SNTL1 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
rd3p050sntl1-etched.step/rd3p050sntl1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rd3p050sntl1.step/rd3p050sntl1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (15 pp, sha256
2e47ca2c706105f9, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).