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Contents

README

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DOP90N10-L

DOINGTER · MOSFETs · TO-220

DOP90N10-L from DOINGTER, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel with VGS rated ±20 V and a threshold of 1.3 V min to 2.7 V max at ID=250 µA.
2 D passive Drain; VDS rated 100 V and continuous drain current 90 A at TC=25 °C (also connected to the tab per the package outline).
3 S passive Source; continuous body-diode current IS is 90 A max and pulsed 360 A.

Key specifications

Parameter Value
Manufacturer DOINGTER
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V,ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VGS=0V, VDS=100V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0A 2
Source Threshold Voltage VGS(th) 1.3 2.1 2.7 V VGS=VDS, ID=250μA 2
Drain-Source On Resistance RDS(ON) 6.5 7.5 mΩ VGS=10V,ID=30A 2
Drain-Source On Resistance RDS(ON) 8.4 10 mΩ VGS=4.5V,ID=20A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, ISD=30A 2
Continuous Drain Current (diode) IS 90 A 2
Pulsed Drain Current (diode) ISM 360 A 2
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 90 A TC=25℃ 1
Continuous Drain Current ID 63 A TC=100℃ 1
Pulsed Drain Current IDM 360 A 1
Power Dissipation PD 85 W TC=25℃ 1
Single pulse avalanche energy EAS 156 mJ TJ=25C, VDD=50V, VG=10V, RG=25ohm, L=0.5mH, IAS=25A 1
Operating and Storage Junction Temperature Range TJ, TSTG -55 150 ℃ 1
Thermal Resistance, Junction to Case RƟJC 1.5 ℃/W 1

CAD (KiCad official)

  • Symbol: DOP90N10-L
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: dop90n10-l-etched.step / dop90n10-l-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dop90n10-l.step / dop90n10-l.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: DOINGTER datasheet (5 pp, sha256 b353a293df515fa6, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF