component
HSM4606BA
Public Made by Adomby adom
HUASHUO MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHSM4606BA
HUASHUO · MOSFETs · SOP-8
HSM4606BA from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (20V, 5A, 25mΩ typ RDS(ON) at VGS=4.5V). |
| 2 | G1 | input | Gate of the N-channel MOSFET, with VGS rated ±12V and threshold 0.5 to 1.2V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (-20V, -5A, 55mΩ typ RDS(ON) at VGS=-4.5V). |
| 4 | G2 | input | Gate of the P-channel MOSFET, with VGS rated ±12V and threshold -0.5 to -1.2V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET, rated VDS -20V and pulsed current -20A; pins 5 and 6 are both D2. |
| 6 | D2 | passive | Drain of the P-channel MOSFET, rated VDS -20V and pulsed current -20A; pins 5 and 6 are both D2. |
| 7 | D1 | passive | Drain of the N-channel MOSFET, rated VDS 20V and pulsed current 20A; pins 7 and 8 are both D1. |
| 8 | D1 | passive | Drain of the N-channel MOSFET, rated VDS 20V and pulsed current 20A; pins 7 and 8 are both D1. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Ch) | VDS | 20 | V | 1 | |||
| Drain-Source Voltage (P-Ch) | VDS | -20 | V | 1 | |||
| Gate-Source Voltage (N-Ch) | VGS | -12 | 12 | V | 1 | ||
| Gate-Source Voltage (P-Ch) | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current (N-Ch) | ID@TA=25℃ | 5 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current (P-Ch) | ID@TA=25℃ | -5 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current (N-Ch) | ID@TA=70℃ | 3.2 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current (P-Ch) | ID@TA=70℃ | -3.2 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current (N-Ch) | IDM | 20 | A | Pulsed Drain Current | 1 | ||
| Pulsed Drain Current (P-Ch) | IDM | -20 | A | Pulsed Drain Current | 1 | ||
| Total Power Dissipation | PD@TA=25℃ | 2 | W | Note 4 | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 63 | ℃/W | Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 50 | ℃/W | Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper | 1 | ||
| Drain-Source Breakdown Voltage (N-Ch) | BVDSS | 20 | V | VGS=0V , ID=250uA | 2 | ||
| Static Drain-Source On-Resistance (N-Ch) | RDS(ON) | 25 | 35 | mΩ | VGS=4.5V , ID=5A | 2 | |
| Static Drain-Source On-Resistance (N-Ch) | RDS(ON) | 35 | 45 | mΩ | VGS=2.5V , ID=3A | 2 | |
| Gate Threshold Voltage (N-Ch) | VGS(th) | 0.5 | 0.8 | 1.2 | V | VGS=VDS , ID =250uA | 2 |
| Drain-Source Leakage Current (N-Ch) | IDSS | 1 | uA | VDS=16V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current (N-Ch) | IDSS | 5 | uA | VDS=16V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current (N-Ch) | IGSS | -100 | 100 | nA | VGS=±12V , VDS=0V | 2 | |
| Diode Forward Voltage (N-Ch) | VSD | 1 | V | VGS=0V , IS=1A , TJ=25℃ | 2 | ||
| Drain-Source Breakdown Voltage (P-Ch) | BVDSS | -20 | V | VGS=0V , ID=-250uA | 3 | ||
| Static Drain-Source On-Resistance (P-Ch) | RDS(ON) | 55 | 65 | mΩ | VGS=-4.5V , ID=-5A | 3 | |
| Static Drain-Source On-Resistance (P-Ch) | RDS(ON) | 65 | 80 | mΩ | VGS=-2.5V , ID=-3A | 3 | |
| Gate Threshold Voltage (P-Ch) | VGS(th) | -0.5 | -0.7 | -1.2 | V | VGS=VDS , ID =-250uA | 3 |
| Drain-Source Leakage Current (P-Ch) | IDSS | -1 | uA | VDS=-16V , VGS=0V , TJ=25℃ | 3 | ||
| Drain-Source Leakage Current (P-Ch) | IDSS | -5 | uA | VDS=-16V , VGS=0V , TJ=55℃ | 3 | ||
| Gate-Source Leakage Current (P-Ch) | IGSS | -100 | 100 | nA | VGS=±12V , VDS=0V | 3 | |
| Diode Forward Voltage (P-Ch) | VSD | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 3 |
CAD (KiCad official)
- Symbol:
HSM4606BA - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
hsm4606ba-etched.step/hsm4606ba-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsm4606ba.step/hsm4606ba.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (8 pp, sha256
1068625f5fad4159, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).