component
IRFR120ATM-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRFR120ATM-VB
VBsemi Elec · MOSFETs · TO-252
IRFR120ATM-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate-Source Voltage VGS is rated ±20 V (absolute maximum), and VGS(th) is specified at VDS = VGS, ID = 250 µA. |
| 2 | D | passive | Drain-Source Voltage VDS is rated 100 V, and the drain is connected to the package tab (Junction-to-Case (Drain) thermal rating). |
| 3 | S | passive | Continuous Source Current (Diode Conduction) IS is rated 3 A, and the source is the reference for the gate-source voltage ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Pulsed Drain Current | IDM | 40 | A | 1 | |||
| Continuous Source Current (Diode Conduction) | IS | 3 | A | 1 | |||
| Avalanche Current | IAS | 3 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 18 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 96 | W | TC = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance (10 s) | RthJA | 15 | 18 | °C/W | 10 s | 1 | |
| Junction-to-Ambient Thermal Resistance (Steady State) | RthJA | 40 | 50 | °C/W | Steady State | 1 | |
| Junction-to-Case (Drain) Thermal Resistance | RthJC | 0.85 | 1.1 | °C/W | 1 | ||
| Drain-Source Breakdown Voltage | VDS | 100 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Total Gate Charge | Qg | 24 | 41 | nC | VDS = 50 V, VGS = 10 V, ID = 3 A | 2 | |
| Diode Forward Voltage | VSD | 0.9 | 1.5 | V | IF = 3 A, VGS = 0 V | 2 | |
| Source-Drain Reverse Recovery Time | trr | 180 | 250 | ns | IF = 3 A, dI/dt = 100 A/µs | 2 |
CAD (KiCad official)
- Symbol:
IRFR120ATM-VB - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
irfr120atm-vb-etched.step/irfr120atm-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfr120atm-vb.step/irfr120atm-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
5feb565625c124b8, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).