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Contents

README

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WSF30150

Winsok Semicon · MOSFETs · TO-252

WSF30150 from Winsok Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; VGS is rated ±20 V, with threshold voltage 1.2 V min to 2.5 V max at ID=250uA.
2 D passive Drain, also the exposed tab; VDS is rated 30 V and continuous drain current is 110 A at TC=25℃.
3 S passive Source of the N-channel MOSFET; continuous source (body diode) current is 90 A max.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current, VGS @ 10V ID@TC=25℃ 110 A 1
Continuous Drain Current, VGS @ 10V ID@TC=100℃ 68 A 1
Continuous Drain Current, VGS @ 10V ID@TA=25℃ 19 A 1
Continuous Drain Current, VGS @ 10V ID@TA=70℃ 16 A 1
Pulsed Drain Current IDM 192 A Note 2: pulse width ≤300us, duty cycle ≤2% 1
Single Pulse Avalanche Energy EAS 144.7 mJ Note 3: VDD=25V, VGS=10V, L=0.1mH, IAS=53.8A 1
Avalanche Current IAS 53.8 A 1
Total Power Dissipation PD@TC=25℃ 62.5 W Note 4: limited by 175℃ junction temperature 1
Total Power Dissipation PD@TA=25℃ 2.42 W Note 4: limited by 175℃ junction temperature 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W Note 1: surface mounted on 1 inch² FR-4 board with 2OZ copper 1
Thermal Resistance Junction-Ambient RθJA 25 ℃/W t ≤10s; Note 1: surface mounted on 1 inch² FR-4 board with 2OZ copper 1
Thermal Resistance Junction-Case RθJC 2.4 ℃/W Note 1: surface mounted on 1 inch² FR-4 board with 2OZ copper 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V , ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 2.3 4 mΩ VGS=10V , ID=30A 2
Static Drain-Source On-Resistance RDS(ON) 4.3 6 mΩ VGS=4.5V , ID=15A 2
Gate Threshold Voltage VGS(th) 1.2 1.6 2.5 V VGS=VDS , ID =250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=24V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Continuous Source Current IS 90 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 360 A Note 2: pulse width ≤300us, duty cycle ≤2% 2
Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: WSF30150
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: wsf30150-etched.step / wsf30150-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsf30150.step / wsf30150.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (5 pp, sha256 6ab083a0a2f58d6f, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF