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Contents

Pinout
Key specifications
Electrical characteristics
Materials and finish
CAD (KiCad official)
Provenance

README

markdown

2SA2016-TD-E

onsemi · Bipolar Transistors - BJT · SOT-89

2SA2016-TD-E from onsemi, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	Base	input	Base of the PNP transistor; max base current (-)1.2 A, emitter-to-base voltage (--)6 V max.
2	Collector	passive	Collector of the PNP transistor; collector current (-)7 A (10 A pulse), VCEO (--)50 V, VCBO (-50) V.
3	Emitter	passive	Emitter of the PNP transistor, connected to the supply side in typical high-side switching use.

Key specifications

Parameter	Value
Manufacturer	onsemi
Package	SOT-89
Category	Transistors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Collector Cutoff Current	ICBO			-0.1	µA	VCB=-40V, IE=0A	2
Emitter Cutoff Current	IEBO			-0.1	µA	VEB=-4V, IC=0A	2
DC Current Gain	hFE	200		560		VCE=-2V, IC=-500mA	2
Collector-to-Emitter Saturation Voltage 1	VCE(sat)1		-230	-390	mV	IC=-3.5A, IB=-175mA	2
Collector-to-Emitter Saturation Voltage 2	VCE(sat)2		-240	-400	mV	IC=-2A, IB=-40mA	2
Base-to-Emitter Saturation Voltage	VBE(sat)		-0.83	-1.2	V	IC=-2A, IB=-40mA	2
Collector-to-Base Breakdown Voltage	V(BR)CBO	-50			V	IC=-10µA, IE=0A	2
Collector-to-Emitter Breakdown Voltage	V(BR)CES	-50			V	IC=-100µA, RBE=0Ω	2
Emitter-to-Base Breakdown Voltage	V(BR)EBO	-6			V	IE=-10µA, IC=0A	2
Collector-to-Base Voltage	VCBO			-50	V	Ta=25°C	1
Collector-to-Emitter Voltage	VCES			-50	V	Ta=25°C	1
Emitter-to-Base Voltage	VEBO			-6	V	Ta=25°C	1
Collector Current	IC			-7	A	Ta=25°C	2
Collector Current (Pulse)	ICP			-10	A	Ta=25°C	2
Base Current	IB			-1.2	A	Ta=25°C	2
Collector Dissipation	PC			1.3	W	When mounted on ceramic substrate (250mm2×0.8mm)	2
Collector Dissipation	PC			3.5	W	Tc=25°C	2
Junction Temperature	Tj			150	°C		2
Storage Temperature	Tstg	-55		150	°C		2
Gain-Bandwidth Product	fT		290		MHz	VCE=-10V, IC=-500mA	2
Output Capacitance	Cob		50		pF	VCB=-10V, f=1MHz	2
Turn-On Time	ton		40		ns	See specified Test Circuit	2
Storage Time	tstg		225		ns	See specified Test Circuit	2
Fall Time	tf		25		ns	See specified Test Circuit	2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part	Material	Colour / plating	Datasheet says	Page
housing	PC		Base Current IB (--)1.2 A Collector Dissipation PC	2

CAD (KiCad official)

Symbol: 2SA2016-TD-E
Footprint: Package_TO_SOT_SMD:SOT-89-3
3D model: SOT-89 (KiCad packages3D, STEP)
3D model files: 2sa2016-td-e-etched.step / 2sa2016-td-e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sa2016-td-e.step / 2sa2016-td-e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: onsemi datasheet (8 pp, sha256 e370038ba2e473d0, retrieved 2026-10-22, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF