component
FQD17P06TM
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFQD17P06TM
UMW · MOSFETs · TO-252
FQD17P06TM from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the -60V P-channel MOSFET; the gate-source voltage rating is VGSS = ±25 V. |
| 2 | D | passive | DRAIN terminal; continuous drain current is rated at -12 A at TC=25°C (-7.6 A at TC=100°C) with VDSS = -60 V. |
| 3 | S | passive | SOURCE terminal; reference for the gate-source voltage (VGSS ±25 V) and the drain-source ratings (VDSS -60 V). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -60 | V | 1 | |||
| Drain Current - Continuous | ID | -12 | A | TC=25°C | 1 | ||
| Drain Current - Continuous | ID | -7.6 | A | TC=100°C | 1 | ||
| Drain Current - Pulsed | IDM | -48 | A | 1 | |||
| Gate-Source Voltage | VGSS | -25 | 25 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 300 | mJ | 1 | |||
| Avalanche Current | IAR | -12 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 4.4 | mJ | 1 | |||
| Peak Diode Recovery dv/dt | dv/dt | -7 | V/ns | 1 | |||
| Power Dissipation (TA=25°C) | PD | 2.5 | W | TA=25°C, mounted on minimum recommended pad (PCB mount) | 2 | ||
| Power Dissipation (TC=25°C) | PD | 44 | W | TC=25°C | 2 | ||
| Power Dissipation Derate above 25°C | 0.35 | W/°C | above 25°C | 2 | |||
| Operating and Storage Temperature Range | TJ,TSTG | -55 | 150 | °C | 2 | ||
| Maximum lead temperature for soldering purposes | TL | 300 | °C | 1/8 in from case, 5 s | 2 | ||
| Thermal Resistance, Junction to Case, Max | RθJC | 2.85 | °C/W | 2 | |||
| Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max | RθJA | 110 | °C/W | Minimum pad of 2-oz copper | 2 | ||
| Thermal Resistance, Junction to Ambient (1 in² Pad of 2-oz Copper), Max | RθJA | 50 | °C/W | 1 in² pad of 2-oz copper | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | ID=-250µA, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS=-60V, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -10 | µA | VGS=-48V, TC=125°C | 3 | ||
| Gate-Body Leakage Current, Forward | IGSSF | -100 | nA | VGS=-25V, VDS=0V | 3 | ||
| Gate-Body Leakage Current, Reverse | IGSSR | 100 | nA | VGS=25V, VDS=0V | 3 | ||
| Gate Threshold Voltage | VGS(th) | -2 | -3 | V | VDS=VGS, ID=-250µA | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 110 | 135 | mΩ | VGS=-10V, ID=-6A | 3 | |
| Input Capacitance | Ciss | 690 | 900 | pF | VDS=-25V, VGS=0V, f=1MHz | 3 | |
| Output Capacitance | Coss | 325 | 420 | pF | VDS=-25V, VGS=0V, f=1MHz | 3 | |
| Reverse Transfer Capacitance | Crss | 80 | 105 | pF | VDS=-25V, VGS=0V, f=1MHz | 3 | |
| Turn-On Delay Time | tD(on) | 13 | 35 | ns | VDD=-30V, ID=-8.5A, RG=25Ω | 3 | |
| Turn-On Rise Time | tr | 100 | 210 | ns | VDD=-30V, ID=-8.5A, RG=25Ω | 3 | |
| Turn-Off Delay Time | tD(off) | 22 | 55 | ns | VDD=-30V, ID=-8.5A, RG=25Ω | 3 | |
| Turn-Off Fall Time | tf | 60 | 130 | ns | VDD=-30V, ID=-8.5A, RG=25Ω | 3 | |
| Total Gate Charge | Qg | 21 | 27 | nC | VDS=-48V, ID=-12A, VGS=-10V | 3 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | -12 | A | 4 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | -48 | A | 4 | |||
| Drain-Source Diode Forward Voltage | VSD | -4 | V | VGS=0V, IS=-12A | 4 | ||
| Gate to Source Charge | Qgs | 4.2 | nC | VDS=-48V, ID=-12A, VGS=-10V | 3 | ||
| Gate to Drain Charge | Qgd | 10 | nC | VDS=-48V, ID=-12A, VGS=-10V | 3 | ||
| Breakdown Voltage Temperature Coefficient | ∆BVDSS/∆TJ | -0.06 | V/°C | Referenced to 25°C, ID=-250µA | 3 | ||
| Forward Transconductance | gFS | 8.7 | S | VDS=-30V, ID=-6A | 3 | ||
| Reverse Recovery Time | trr | 92 | ns | dIF/dt=100A/µs | 4 | ||
| Reverse Recovery Charge | Qrr | 0.32 | µC | dIF/dt=100A/µs | 4 |
CAD (KiCad official)
- Symbol:
FQD17P06TM - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
fqd17p06tm-etched.step/fqd17p06tm-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fqd17p06tm.step/fqd17p06tm.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (11 pp, sha256
6ed97629529c98f6, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).