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WGD2N65SE

Public Made by Adom

by adom

Wild Goose MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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WGD2N65SE

Wild Goose · MOSFETs · TO-252

WGD2N65SE from Wild Goose, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate (G) input Gate terminal of the MOSFET; the absolute maximum gate-source voltage VGSS is ±30 V.
2 Drain (D) passive Drain terminal of the MOSFET; the datasheet rates drain-source voltage VDSS at 650 V and drain current ID at 2 A (TC=25℃).
3 Source (S) passive Source terminal of the MOSFET; the datasheet gives a maximum diode forward current IS of 2 A and pulsed forward current ISM of 8 A for the body diode.

Key specifications

Parameter Value
Manufacturer Wild Goose
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 650 V 1
Drain Current ID 2 A TC=25℃ 1
Drain Current ID 1.5 A TC=100℃ 1
Gate-Source Voltage VGSS -30 30 V 1
Single Pulse Avalanche Energy EAS 120 mJ note 1 1
Avalanche Current IAR 2 A note 2 1
Power Dissipation PD 40 W Ta=25℃ 1
Junction Temperature (Max) Tj 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1
Maximum lead temperature for soldering TL 300 ℃ 1/8 in from case for 5 seconds 1
Thermal Resistance, Junction to Case RθJC 2.87 ℃/W 1
Thermal Resistance, Junction to Ambient RθJA 50 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 650 V ID=250μA, VGS=0 2
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ 0.4 V/℃ ID=250μA, Reference to 25℃ 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=650V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 10 μA VDS=520V, TC=125℃ 2
Gate-body leakage Current, Forward IGSSF 100 nA VGS=+30V, VDS=0V 2
Gate-body leakage Current, Reverse IGSSR -100 nA VGS=-30V, VDS=0V 2
Gate Threshold Voltage VGS(TH) 2 4 V ID=250μA, VDS=VGS 2
Static Drain-Source On-Resistance RDS(ON) 4.4 4.8 Ω ID=1A, VGS=10V 2
Input Capacitance Ciss 270 350 pF VDS=25V, VGS=0, f=1.0MHz 2
Output Capacitance Coss 40 50 pF VDS=25V, VGS=0, f=1.0MHz 2
Reverse Transfer Capacitance Crss 5 7 pF VDS=25V, VGS=0, f=1.0MHz 2
Turn-On Delay Time Td(on) 10 30 ns VDD=325V, ID=2A, RG=25Ω (Note 3,4) 2
Turn-On Rise Time Tr 25 60 ns VDD=325V, ID=2A, RG=25Ω (Note 3,4) 2
Turn-Off Delay Time Td(off) 20 50 ns VDD=325V, ID=2A, RG=25Ω (Note 3,4) 2
Turn-Off Rise Time Tf 25 60 ns VDD=325V, ID=2A, RG=25Ω (Note 3,4) 2
Total Gate Charge Qg 90 110 nC VDS=520V, VGS=10V, ID=2A (Note 3,4) 2
Gate-Source Charge Qgs 1.6 nC VDS=520V, VGS=10V, ID=2A (Note 3,4) 2
Gate-Drain Charge Qgd 4.3 nC VDS=520V, VGS=10V, ID=2A (Note 3,4) 2
Max. Diode Forward Current Is 2 A 2
Max. Pulsed Forward Current ISM 8 A 2
Diode Forward Voltage VSD 1.5 V ID=2A 2
Reverse Recovery Time Trr 180 ns IS=2A, VGS=0V, diF/dt=100A/μs (Note3) 2
Reverse Recovery Charge Qrr 0.72 μC IS=2A, VGS=0V, diF/dt=100A/μs (Note3) 2

CAD (KiCad official)

  • Symbol: WGD2N65SE
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: wgd2n65se-etched.step / wgd2n65se-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wgd2n65se.step / wgd2n65se.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wild Goose datasheet (7 pp, sha256 89f7da129bf8b0fc, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF