component
AO6601
Public Made by Adomby adom
UMW MOSFETs, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAO6601
UMW · MOSFETs · SOT-23-6
AO6601 from UMW, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of the N-channel MOSFET; gate-source voltage is rated ±12 V (VGS ±12 V, Absolute Maximum Ratings). |
| 2 | S2 | passive | Source of the P-channel MOSFET (Q2); the datasheet gives no pin-specific limit for this terminal, and the device is rated for VDS -30 V with ID -2.3 A continuous at TA=25°C. |
| 3 | G2 | input | Gate of the P-channel MOSFET; gate-source voltage is rated ±12 V (VGS ±12 V, Absolute Maximum Ratings). |
| 4 | D2 | passive | Drain of the P-channel MOSFET; rated VDS -30 V with ID -2.3 A continuous at TA=25°C. |
| 5 | S1 | passive | Source of the N-channel MOSFET (Q1); the datasheet gives no pin-specific limit for this terminal, and the device is rated for VDS 30 V with ID 3.4 A continuous at TA=25°C. |
| 6 | D1 | passive | Drain of the N-channel MOSFET; rated VDS 30 V with ID 3.4 A continuous at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage (N-ch) | BVDSS | 30 | V | ID=250µA, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current (N-ch) | IDSS | 1 | µA | VDS=30V, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current (N-ch) | IDSS | 5 | µA | VDS=30V, VGS=0V, TJ=55°C | 3 | ||
| Gate-Body leakage current (N-ch) | IGSS | -100 | 100 | nA | VDS=0V, VGS=±12V | 3 | |
| Gate Threshold Voltage (N-ch) | VGS(th) | 0.5 | 1.5 | V | VDS=VGS, ID=250μA | 3 | |
| On state drain current (N-ch) | ID(ON) | 20 | A | VGS=10V, VDS=5V | 3 | ||
| Static Drain-Source On-Resistance (N-ch) | RDS(ON) | 46 | 60 | mΩ | VGS=10V, ID=3.4A | 3 | |
| Static Drain-Source On-Resistance (N-ch) | RDS(ON) | 50 | 70 | mΩ | VGS=4.5V, ID=3A | 3 | |
| Static Drain-Source On-Resistance (N-ch) | RDS(ON) | 62 | 90 | mΩ | VGS=2.5V, ID=2A | 3 | |
| Drain-Source Breakdown Voltage (P-ch) | BVDSS | -30 | V | ID=-250µA, VGS=0V | 8 | ||
| Zero Gate Voltage Drain Current (P-ch) | IDSS | -1 | µA | VDS=-30V, VGS=0V | 8 | ||
| Gate-Body leakage current (P-ch) | IGSS | -100 | 100 | nA | VDS=0V, VGS=±12V | 8 | |
| Gate Threshold Voltage (P-ch) | VGS(th) | -0.6 | -1.4 | V | VDS=VGS, ID=-250μA | 8 | |
| On state drain current (P-ch) | ID(ON) | -15 | A | VGS=-10V, VDS=-5V | 8 | ||
| Static Drain-Source On-Resistance (P-ch) | RDS(ON) | 88 | 115 | mΩ | VGS=-10V, ID=-2.3A | 8 | |
| Static Drain-Source On-Resistance (P-ch) | RDS(ON) | 103 | 150 | mΩ | VGS=-4.5V, ID=-2A | 8 | |
| Static Drain-Source On-Resistance (P-ch) | RDS(ON) | 139 | 200 | mΩ | VGS=-2.5V, ID=-1A | 8 | |
| Drain-Source Voltage (N-ch) | VDS | 30 | V | 1 | |||
| Drain-Source Voltage (P-ch) | VDS | -30 | V | 1 | |||
| Gate-Source Voltage (N-ch) | VGS | -12 | 12 | V | 1 | ||
| Gate-Source Voltage (P-ch) | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current (N-ch) | ID | 3.4 | A | TA=25°C | 1 | ||
| Continuous Drain Current (N-ch) | ID | 2.7 | A | TA=70°C | 1 | ||
| Continuous Drain Current (P-ch) | ID | -2.3 | A | TA=25°C | 1 | ||
| Continuous Drain Current (P-ch) | ID | -1.8 | A | TA=70°C | 1 | ||
| Pulsed Drain Current (N-ch) | IDM | 20 | A | 1 | |||
| Pulsed Drain Current (P-ch) | IDM | -15 | A | 1 | |||
| Power Dissipation (N-ch and P-ch) | PD | 1.15 | W | TA=25°C | 1 | ||
| Power Dissipation (N-ch and P-ch) | PD | 0.73 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range (N-ch and P-ch) | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient (t ≤ 10s) | RθJA | 78 | 106 | °C/W | t ≤ 10s | 2 | |
| Maximum Junction-to-Ambient (Steady-State) | RθJA | 110 | 150 | °C/W | Steady-State | 2 | |
| Maximum Junction-to-Lead (Steady-State) | RθJL | 64 | 80 | °C/W | Steady-State | 2 |
CAD (KiCad official)
- Symbol:
AO6601 - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files:
ao6601-etched.step/ao6601-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao6601.step/ao6601.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (15 pp, sha256
45dccb713a69c7b4, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).