component
FDPF55N06
Public Made by Adomby adom
onsemi MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFDPF55N06
onsemi · MOSFETs · TO-220F
FDPF55N06 from onsemi, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is rated to ±25 V (VGSS) for the FDPF55N06 TO-220F package. |
| 2 | D | passive | Drain terminal; continuous drain current is 55 A at TC = 25°C, limited by maximum junction temperature. |
| 3 | S | passive | Source terminal; maximum continuous drain-source diode forward current is 55 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-220F |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V | 2 | |||
| Drain Current - Continuous (TC = 25°C) | ID | 55 | A | TC = 25°C | 2 | ||
| Drain Current - Continuous (TC = 100°C) | ID | 34.8 | A | TC = 100°C | 2 | ||
| Drain Current - Pulsed | IDM | 220 | A | Note 1 | 2 | ||
| Gate-Source Voltage | VGSS | -25 | 25 | V | 2 | ||
| Single Pulsed Avalanche Energy | EAS | 480 | mJ | Note 2 | 2 | ||
| Avalanche Current | IAR | 55 | A | Note 1 | 2 | ||
| Repetitive Avalanche Energy | EAR | 11.4 | mJ | Note 1 | 2 | ||
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | Note 3 | 2 | ||
| Power Dissipation (TC = 25°C) | PD | 48 | W | TC = 25°C | 2 | ||
| Derate above 25°C | 0.4 | W/°C | Above 25°C | 2 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Maximum lead temperature for soldering purposes, 1/8 inch from case for 5 seconds | TL | 300 | °C | 1/8 inch from case, 5 s | 2 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 2.58 | °C/W | 2 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS = 0 V, ID = 250 µA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 60 V, VGS = 0 V | 3 | ||
| Zero Gate Voltage Drain Current (TC = 150°C) | IDSS | 10 | µA | VDS = 48 V, TC = 150°C | 3 | ||
| Gate-Body Leakage Current, Forward | IGSSF | 100 | nA | VGS = 20 V, VDS = 0 V | 3 | ||
| Gate-Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS = -20 V, VDS = 0 V | 3 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 µA | 3 | |
| Static Drain-Source On-Resistance | RDS(on) | 0.018 | 0.022 | Ω | VGS = 10 V, ID = 27.5 A | 3 | |
| Forward Transconductance | gFS | 33 | S | VDS = 25 V, ID = 27.5 A | 3 | ||
| Input Capacitance | Ciss | 1160 | 1510 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 3 | |
| Output Capacitance | Coss | 375 | 490 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 3 | |
| Reverse Transfer Capacitance | Crss | 60 | 90 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 3 | |
| Turn-On Delay Time | td(on) | 30 | 65 | ns | VDD = 30 V, ID = 55 A, RG = 25 Ω (Note 4) | 3 | |
| Turn-On Rise Time | tr | 130 | 265 | ns | VDD = 30 V, ID = 55 A, RG = 25 Ω (Note 4) | 3 | |
| Turn-Off Delay Time | td(off) | 70 | 150 | ns | VDD = 30 V, ID = 55 A, RG = 25 Ω (Note 4) | 3 | |
| Turn-Off Fall Time | tf | 95 | 195 | ns | VDD = 30 V, ID = 55 A, RG = 25 Ω (Note 4) | 3 | |
| Total Gate Charge | Qg | 30 | 37 | nC | VDS = 48 V, ID = 55 A, VGS = 10 V (Note 4) | 3 | |
| Gate-Source Charge | Qgs | 6.5 | nC | VDS = 48 V, ID = 55 A, VGS = 10 V (Note 4) | 3 | ||
| Gate-Drain Charge | Qgd | 7.5 | nC | VDS = 48 V, ID = 55 A, VGS = 10 V (Note 4) | 3 | ||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 55 | A | 3 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 220 | A | 3 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | VGS = 0 V, IS = 55 A | 3 | ||
| Reverse Recovery Time | trr | 40 | ns | VGS = 0 V, IS = 55 A, dIF/dt = 100 A/µs | 3 | ||
| Reverse Recovery Charge | Qrr | 55 | µC | VGS = 0 V, IS = 55 A, dIF/dt = 100 A/µs | 3 | ||
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | 0.05 | V/°C | ID = 250 µA, Referenced to 25°C | 3 |
CAD (KiCad official)
- Symbol:
FDPF55N06 - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (12 pp, sha256
34ee9f4636727baf, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).