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Contents

README

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GC180N65MF

GOFORD · MOSFETs · TO-263

GC180N65MF from GOFORD, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Insulated gate terminal controlling channel conduction. VGS(th) = 3.0-5.0 V (typ 4.0 V); absolute maximum VGS = ±30 V. Drive with VGS = 10 V for rated RDS(on) ≤ 190 mΩ.
2 D passive Drain. High-voltage power terminal. Rated VDS = 650 V, continuous ID = 20 A (TC = 25 °C), pulsed IDM = 60 A. Electrically connected to the exposed metal tab of the TO-263 package.
3 S passive Source. Power return terminal for the MOSFET channel and anode of the intrinsic body diode. Body diode VSD ≤ 1.2 V at ISD = 10 A, continuous IS = 20 A.
4 D (Tab) passive Drain tab (exposed thermal pad). Electrically identical to pin 2 (Drain) and serves as the primary thermal path. Solder to a copper pour for heat-sinking; RthJC = 0.83 °C/W.

Key specifications

Parameter Value
Manufacturer GOFORD
Package TO-263
Category Transistors/Thyristors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • GC180N65MF

CAD (KiCad official)

  • Symbol: GC180N65MF
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: gc180n65mf-etched.step / gc180n65mf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); gc180n65mf.step / gc180n65mf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (None pp, sha256 d026b2041c45fc3d, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF