component
RGT30NS65DGTL
Public Made by Adomby adom
ROHM Semicon IGBTs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownRGT30NS65DGTL
ROHM Semicon · IGBTs · TO-263
RGT30NS65DGTL from ROHM Semicon, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the IGBT; VGES is ±30V max and gate-emitter threshold VGE(th) is 5.0 to 7.0V at VCE=5V, IC=10mA. |
| 2 | Collector | passive | Collector terminal of the IGBT, connected to the built-in FRD cathode; VCES is 650V and IC is 15A at TC=100°C. |
| 3 | Emitter | passive | Emitter terminal of the IGBT, connected to the built-in FRD anode; it is the reference for gate drive. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | TO-263 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Operating Junction Temperature | Tj | -40 | 175 | °C | 1 | ||
| Storage Temperature | Tstg | -55 | 175 | °C | 1 | ||
| Collector - Emitter Voltage | VCES | 650 | V | 1 | |||
| Gate - Emitter Voltage | VGES | 30 | V | 1 | |||
| Collector Current | IC | 30 | A | TC = 25°C | 1 | ||
| Collector Current | IC | 15 | A | TC = 100°C | 1 | ||
| Pulsed Collector Current | ICP | 45 | A | *1 Pulse width limited by Tjmax. | 1 | ||
| Diode Pulsed Forward Current | IFP | 45 | A | *1 Pulse width limited by Tjmax. | 1 | ||
| Diode Forward Current | IF | 26 | A | TC = 25°C | 1 | ||
| Diode Forward Current | IF | 15 | A | TC = 100°C | 1 | ||
| Power Dissipation | PD | 133 | W | TC = 25°C | 1 | ||
| Power Dissipation | PD | 66 | W | TC = 100°C | 1 | ||
| Thermal Resistance IGBT Junction - Case | Rθ(j-c) | 1.12 | °C/W | 2 | |||
| Thermal Resistance Diode Junction - Case | Rθ(j-c) | 2.86 | °C/W | 2 | |||
| Collector - Emitter Saturation Voltage | VCE(sat) | 1.65 | 2.1 | V | Tj = 25°C, IC = 15A, VGE = 15V | 2 | |
| Gate - Emitter Threshold Voltage | VGE(th) | 5 | 6 | 7 | V | VCE = 5V, IC = 10.0mA | 2 |
| Gate - Emitter Leakage Current | IGES | 200 | nA | VGE = 30V, VCE = 0V | 2 | ||
| Collector Cut - off Current | ICES | 10 | μA | VCE = 650V, VGE = 0V | 2 | ||
| Collector - Emitter Breakdown Voltage | BVCES | 650 | V | IC = 10μA, VGE = 0V | 2 | ||
| Short Circuit Withstand Time | tsc | 5 | μs | VGE = 15V, VCC ≦ 360V, Tj = 25°C | 3 | ||
| Diode Forward Voltage | VF | 1.5 | 1.95 | V | IF = 15A, Tj = 25°C | 4 |
CAD (KiCad official)
- Symbol:
RGT30NS65DGTL - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
rgt30ns65dgtl-etched.step/rgt30ns65dgtl-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rgt30ns65dgtl.step/rgt30ns65dgtl.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (12 pp, sha256
0e9e1e3bb689023d, retrieved 2026-10-29, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).