component
CMB80N06A
Public Made by Adomby adom
Cmos MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCMB80N06A
Cmos · MOSFETs · TO-263
CMB80N06A from Cmos, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drives the MOSFET with VGS rated ±20 V maximum and RDS(ON) < 6.5 mΩ at VGS=10 V. |
| 2 | D | passive | Drain (center lead, connected to the tab); VDS is rated 60 V with continuous current of 90 A at TC=25℃. |
| 3 | S | passive | Source; continuous source current is 90 A and pulsed source current is 270 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos |
| Package | TO-263 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250μA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VGS=VDS, ID=250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | μA | VDS=68V, VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | 90 | A | 2 | |||
| Pulsed Source Current | ISM | 270 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=50A, TJ=25℃ | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 6.5 | mΩ | VGS=10V, ID=20A | 2 | ||
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 90 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 72 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 270 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 490 | mJ | 1 | |||
| Total Power Dissipation | PD | 170 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 175 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 60 | ℃/ W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 0.88 | ℃/ W | 1 |
CAD (KiCad official)
- Symbol:
CMB80N06A - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
cmb80n06a-etched.step/cmb80n06a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmb80n06a.step/cmb80n06a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos datasheet (2 pp, sha256
aa2b87cfbeaa89c3, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).