component
MSQ30P40D
Public Made by Adomby adom
Bruckewell MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMSQ30P40D
Bruckewell · MOSFETs · SOP-8
MSQ30P40D from Bruckewell, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of P-channel MOSFET 1; MOSFET rated VDS -30 V and continuous drain current -6 A at TA=25°C. |
| 2 | G1 | input | Gate of P-channel MOSFET 1; gate-source voltage rated ±20 V, threshold -1.0 to -2.5 V. |
| 3 | S2 | passive | Source of P-channel MOSFET 2; MOSFET rated VDS -30 V and continuous drain current -6 A at TA=25°C. |
| 4 | G2 | input | Gate of P-channel MOSFET 2; gate-source voltage rated ±20 V, threshold -1.0 to -2.5 V. |
| 5 | D2 | passive | Drain of P-channel MOSFET 2 (pins 5 and 6 are both D2); pulsed drain current -26 A. |
| 6 | D2 | passive | Drain of P-channel MOSFET 2 (pins 5 and 6 are both D2); pulsed drain current -26 A. |
| 7 | D1 | passive | Drain of P-channel MOSFET 1 (pins 7 and 8 are both D1); pulsed drain current -26 A. |
| 8 | D1 | passive | Drain of P-channel MOSFET 1 (pins 7 and 8 are both D1); pulsed drain current -26 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Bruckewell |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | -6 | A | TA=25°C | 2 | ||
| Continuous Drain Current | ID | -5 | A | TA=70°C | 2 | ||
| Pulsed Drain Current | IDM | -26 | A | 2 | |||
| Single Pulse Avalanche Current | IAS | -30 | A | L=0.1mH | 2 | ||
| Single Pulse Avalanche Energy | EAS | 45 | mJ | L=0.1mH | 2 | ||
| Power Dissipation | PD | 2.2 | W | TA=25°C | 2 | ||
| Operating Junction and Storage Temperature | TJ/TSTG | -55 | 150 | °C | 2 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 85 | °C/W | 2 | |||
| Junction-to-Case Thermal Resistance | RθJC | 25 | °C/W | 2 | |||
| Gate Threshold Voltage | VGS(th) | -1 | -2.5 | V | VDS=VGS, ID=-250μA | 3 | |
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V, ID=-250μA | 3 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 3 | |
| Drain-Source Leakage Current | IDSS | -1 | μA | VDS=-24V, VGS=0V, TJ=25°C | 3 | ||
| Drain-Source Leakage Current | IDSS | -10 | μA | VDS=-24V, VGS=0V, TJ=55°C | 3 | ||
| Drain-Source On-Resistance | RDS(on) | 30 | mΩ | VGS=-10V, ID=-6A | 3 | ||
| Drain-Source On-Resistance | RDS(on) | 40 | mΩ | VGS=-4.5V, ID=-4A | 3 | ||
| Single Pulse Avalanche Energy | EAS | 5 | mJ | VDD=-25V, IAS=-6A | 3 | ||
| Diode Forward Voltage | VSD | -1.2 | V | IS=-6A, VGS=0, TJ=25°C | 3 | ||
| Continuous Source Current | IS | -6 | A | VG=VD=0V, Force Current | 3 | ||
| Pulsed Source Current | ISM | -26 | A | VG=VD=0V, Force Current | 3 | ||
| Forward Transconductance | gfs | 17 | S | VDS=-5V, ID=-6A | 3 | ||
| Total Gate Charge | Qg | 11.4 | nC | VDS=-15V, ID=-6A, VGS=-4.5V | 4 | ||
| Gate-Source Charge | Qgs | 4.4 | nC | VDS=-15V, ID=-6A, VGS=-4.5V | 4 | ||
| Gate-Drain Charge | Qgd | 4.3 | nC | VDS=-15V, ID=-6A, VGS=-4.5V | 4 | ||
| Turn-On Delay Time | td(on) | 4.4 | ns | VDS=-15V, ID=-6A, VGS=-10V, RG=3.3Ω | 4 | ||
| Rise Time | tr | 14.6 | ns | VDS=-15V, ID=-6A, VGS=-10V, RG=3.3Ω | 4 | ||
| Turn-Off Delay Time | td(off) | 40 | ns | VDS=-15V, ID=-6A, VGS=-10V, RG=3.3Ω | 4 | ||
| Fall Time | tf | 19.3 | ns | VDS=-15V, ID=-6A, VGS=-10V, RG=3.3Ω | 4 | ||
| Input Capacitance | CISS | 1220 | pF | VDS=-15V, VGS=0V, f=1.0MHz | 4 | ||
| Output Capacitance | COSS | 173 | pF | VDS=-15V, VGS=0V, f=1.0MHz | 4 | ||
| Reverse Transfer Capacitance | CRSS | 142 | pF | VDS=-15V, VGS=0V, f=1.0MHz | 4 | ||
| Gate Resistance | Rg | 13 | Ω | VDS=0V, VGS=0V, f=1.0MHz | 4 |
CAD (KiCad official)
- Symbol:
MSQ30P40D - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
msq30p40d-etched.step/msq30p40d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);msq30p40d.step/msq30p40d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Bruckewell datasheet (7 pp, sha256
54f595f651986fad, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).