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Contents

README

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AGM30P18S

AGM-Semi · MOSFETs · SOP-8

AGM30P18S from AGM-Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET; the drain-source voltage rating is -30V.
2 S passive Source of the P-channel MOSFET, tied to the other source pins; continuous drain current is -17A (package limited).
3 S passive Source of the P-channel MOSFET, tied to the other source pins.
4 G input Gate of the P-channel MOSFET with a maximum gate-source voltage of ±20V and a threshold of -1.2V to -2.2V.
5 D passive Drain of the P-channel MOSFET; RDS(on) is 7.0mΩ typical at VGS=-10V, ID=-15A.
6 D passive Drain of the P-channel MOSFET, tied to the other drain pins.
7 D passive Drain of the P-channel MOSFET, tied to the other drain pins.
8 D passive Drain of the P-channel MOSFET, tied to the other drain pins; pulsed drain current is -68A.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V VGS=0V 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID -17 A Ta=25℃ 1
Drain Current-Continuous ID -10 A Ta=100℃ 1
Maximum Power Dissipation PD 2.5 W Ta=25℃ 1
Maximum Power Dissipation PD 1 W Ta=100℃ 1
Avalanche energy EAS 49 mJ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 50 ℃/W Steady State 1
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-30V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) -1.2 -1.6 -2.2 V VDS=VGS,ID=-250μA 2
Forward Transconductance gFS 15 S VDS=-5V,ID=-10A 2
Drain-Source On-State Resistance RDS(on) 7 8 mΩ VGS=-10V, ID=-15A 2
Drain-Source On-State Resistance RDS(on) 10 12 mΩ VGS=-4.5V, ID=-10A 2
Source-Drain Current (Body Diode) ISD -17 A 2
Forward on Voltage VSD -1.2 V VGS=0V,IS=-15A 2
Input Capacitance Ciss 3020 pF VDS=-15V,VGS=0V,F=1MHZ 2
Output Capacitance Coss 365 pF VDS=-15V,VGS=0V,F=1MHZ 2
Reverse Transfer Capacitance Crss 225 pF VDS=-15V,VGS=0V,F=1MHZ 2
Gate resistance Rg 2.2 Ω VGS=0V, VDS=0V,f=1.0MHz 2
Turn-on Delay Time td(on) 16 nS VGS=-10V,VDS=-15V, ID=-10A,RGEN=6.8Ω 2
Turn-on Rise Time tr 31 nS VGS=-10V,VDS=-15V, ID=-10A,RGEN=6.8Ω 2
Turn-Off Delay Time td(off) 66 nS VGS=-10V,VDS=-15V, ID=-10A,RGEN=6.8Ω 2
Turn-Off Fall Time tf 20 nS VGS=-10V,VDS=-15V, ID=-10A,RGEN=6.8Ω 2
Total Gate Charge Qg 36 nC VGS=-10V, VDS=-15V, ID=-10A 2
Gate-Source Charge Qgs 6 nC VGS=-10V, VDS=-15V, ID=-10A 2
Gate-Drain Charge Qgd 10 nC VGS=-10V, VDS=-15V, ID=-10A 2

CAD (KiCad official)

  • Symbol: AGM30P18S
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: agm30p18s-etched.step / agm30p18s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm30p18s.step / agm30p18s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (7 pp, sha256 718d78174d4302e6, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF