component
VBM1680
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownVBM1680
VBsemi Elec · MOSFETs · TO-220AB
VBM1680 from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit ±20 V, threshold 1.0 to 3.0 V at VDS = VGS, ID = 250 μA. |
| 2 | D | passive | Drain (also the case/tab, RthJC 2.5 °C/W max); VDS 60 V, continuous ID 20 A at TC = 25 °C, pulsed IDM 68 A. |
| 3 | S | passive | Source; RDS(on) 0.072 Ω at VGS = 10 V, ID = 10 A, with body diode continuous/pulsed current ISM 68 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 60 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 1 | 3 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 25 | μA | VDS = 60 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current (hot) | IDSS | 250 | μA | VDS = 48 V, VGS = 0 V, TJ = 150 °C | 2 | ||
| Forward Transconductance | gfs | 5.5 | S | VDS = 25 V, ID = 10 A | 2 | ||
| Total Gate Charge | Qg | 25 | nC | VGS = 10 V, ID = 17 A, VDS = 48 V | 2 | ||
| Gate-Source Charge | Qgs | 5.8 | nC | VGS = 10 V, ID = 17 A, VDS = 48 V | 2 | ||
| Gate-Drain Charge | Qgd | 11 | nC | VGS = 10 V, ID = 17 A, VDS = 48 V | 2 | ||
| Pulsed Diode Forward Current | ISM | 68 | A | 2 | |||
| Body Diode Voltage | VSD | 1.5 | V | TJ = 25 °C, IS = 17 A, VGS = 0 V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 88 | 180 | ns | TJ = 25 °C, IF = 17 A, dI/dt = 100 A/s | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 0.29 | 0.64 | μC | TJ = 25 °C, IF = 17 A, dI/dt = 100 A/s | 2 | |
| Drain-Source Voltage | VDS | 60 | V | TC = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC = 25 °C | 1 | |
| Continuous Drain Current | ID | 20 | A | VGS at 10 V, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 12 | A | VGS at 10 V, TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 68 | A | TC = 25 °C | 1 | ||
| Linear Derating Factor | 0.4 | W/°C | 1 | ||||
| Single Pulse Avalanche Energy | EAS | 100 | mJ | VDD = 25 V, starting TJ = 25 °C, L = 403 μH, Rg = 25, IAS = 17 A | 1 | ||
| Maximum Power Dissipation | PD | 60 | W | TC = 25 °C | 1 | ||
| Peak Diode Recovery dV/dt | dV/dt | 4.5 | V/ns | ISD ≤ 17 A, dI/dt ≤ 140 A/μs, VDD ≤ VDS, TJ ≤ 175 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Soldering Recommendations (Peak temperature) | 300 | °C | for 10 s, 1.6 mm from case | 1 | |||
| Maximum Junction-to-Ambient | RthJA | 62 | °C/W | 2 | |||
| Maximum Junction-to-Case (Drain) | RthJC | 2.5 | °C/W | 2 | |||
| Case-to-Sink, Flat, Greased Surface | RthCS | 0.5 | °C/W | 2 | |||
| VDS Temperature Coefficient | ΔVDS/TJ | 0.061 | V/°C | Reference to 25 °C, ID = 1 mA | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.072 | Ω | VGS = 10 V, ID = 10 A | 2 | ||
| Input Capacitance | Ciss | 640 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Output Capacitance | Coss | 360 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 79 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Turn-On Delay Time | td(on) | 13 | ns | VDD = 30 V, ID = 17 A, Rg = 18, RD = 1.7 | 2 | ||
| Rise Time | tr | 58 | ns | VDD = 30 V, ID = 17 A, Rg = 18, RD = 1.7 | 2 | ||
| Turn-Off Delay Time | td(off) | 25 | ns | VDD = 30 V, ID = 17 A, Rg = 18, RD = 1.7 | 2 | ||
| Fall Time | tf | 42 | ns | VDD = 30 V, ID = 17 A, Rg = 18, RD = 1.7 | 2 | ||
| Internal Drain Inductance | LD | 4.5 | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 | ||
| Internal Source Inductance | LS | 7.5 | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 |
CAD (KiCad official)
- Symbol:
VBM1680 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
vbm1680-etched.step/vbm1680-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);vbm1680.step/vbm1680.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
40dcae07d4dba816, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).