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Contents

README

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CJU40P04A

Changjing · MOSFETs · TO-252-2L

CJU40P04A from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate terminal of the P-channel MOSFET; gate-source voltage is limited to ±20 V.
2 DRAIN passive Drain terminal of the MOSFET; rated for a drain-source voltage of -40 V and a continuous drain current of -40 A.
3 SOURCE passive Source terminal of the MOSFET, referenced for the -40 V drain-source rating and the ±20 V gate-source limit.

Key specifications

Parameter Value
Manufacturer Changjing
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS -40 V VGS = 0V, ID = -250µA 2
Gate-body leakage current IGSS -100 100 nA VDS = 0V, VGS = ±20V 2
Gate-threshold voltage VGS(th) -1 -1.5 -2.5 V VDS = VGS, ID = -250µA 2
Static drain-source on-state resistance RDS(on) 10.5 15 mΩ VGS = -10V, ID = -10A 2
Static drain-source on-state resistance RDS(on) 14 22 mΩ VGS = -4.5V, ID = -8A 2
Input capacitance Ciss 2800 4600 pF VDS = -25V, VGS = 0V, f = 1MHz 2
Output capacitance Coss 250 480 pF VDS = -25V, VGS = 0V, f = 1MHz 2
Reverse transfer capacitance Crss 150 300 pF VDS = -25V, VGS = 0V, f = 1MHz 2
Total gate charge Qg 23 46 nC VDS = -32V, VGS = -4.5V, ID = -10A 2
Gate-source charge Qgs 9 18 nC VDS = -32V, VGS = -4.5V, ID = -10A 2
Gate-drain charge Qgd 8.8 18 nC VDS = -32V, VGS = -4.5V, ID = -10A 2
Turn-on delay time td(on) 24 48 ns VDD = -20V, VGS = -10V, RG = 6Ω, ID = -1A 2
Turn-on rise time tr 12 24 ns VDD = -20V, VGS = -10V, RG = 6Ω, ID = -1A 2
Turn-off delay time td(off) 140 280 ns VDD = -20V, VGS = -10V, RG = 6Ω, ID = -1A 2
Turn-off fall time tf 48 96 ns VDD = -20V, VGS = -10V, RG = 6Ω, ID = -1A 2
Zero gate voltage drain current (TJ=25℃) IDSS 1 µA VDS = -32V, VGS = 0V, TJ = 25℃ 2
Continuous drain-source diode forward current IS -40 A 2
Pulsed drain-source diode forward current ISM -160 A 2
Drain-Source Voltage VDS -40 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -40 A 1
Pulsed Drain Current IDM -160 A 1
Single Pulsed Avalanche Energy EAS 40 mJ 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ℃ 1
Thermal Resistance from Junction to Ambient RθJA 100 ℃/W 1
Thermal Resistance from Junction to Case RθJC 1.67 ℃/W 4

CAD (KiCad official)

  • Symbol: CJU40P04A
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: cju40p04a-etched.step / cju40p04a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cju40p04a.step / cju40p04a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (6 pp, sha256 535675daf219db59, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF