component
AO4419-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAO4419-HXY
HXY MOSFET · MOSFETs · SOP-8
AO4419-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; the datasheet lists VDS = -30V and ID = -9A for the device. |
| 2 | S | passive | Source of the P-channel MOSFET, tied in parallel with the other source pins for current handling (ID = -9A at TA=25℃). |
| 3 | S | passive | Source of the P-channel MOSFET, tied in parallel with the other source pins; VGS limit is ±20V. |
| 4 | G | input | Gate of the P-channel MOSFET; maximum gate-source voltage ±20V, threshold VGS(th) -1V to -3V, RDS(ON) < 20mΩ at VGS=-10V. |
| 5 | D | passive | Drain of the P-channel MOSFET; maximum drain-source voltage -30V. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied in parallel with the other drain pins; pulsed drain current up to -50A. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied in parallel with the other drain pins; continuous ID -9A at TA=25℃. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied in parallel with the other drain pins; maximum drain-source voltage -30V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 18 | 20 | mΩ | VGS=-10V, ID=-7A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 32 | 36 | mΩ | VGS=-4.5V, ID=-5A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -3 | V | VDS=VGS, ID=-250uA | 2 | |
| Drain-Source Leakage Current | IDSS | -30 | uA | VDS=-24V, VGS=0V | 2 | ||
| Gate-Source Leakage | IGSS | 100 | nA | VGS=+20V, VDS=0V | 2 | ||
| Total Gate Charge | Qg | 18 | 29 | nC | ID=-7A, VDS=-24V, VGS=-4.5V | 2 | |
| Input Capacitance | Ciss | 1175 | 1690 | pF | VGS=0V, VDS=-25V, f=1.0MHz | 2 | |
| Forward On Voltage | VSD | -1.2 | V | IS=-2.1A, VGS=0V | 2 | ||
| Drain-Source Voltage | VDS | -30 | V | Tc=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | Tc=25℃; printed as + 20 | 1 | |
| Drain Current | ID@TA=25℃ | -9 | A | VGS @ 10V | 1 | ||
| Drain Current | ID@TA=70℃ | -7.3 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | -50 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 2.5 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | 50 | ℃/W | Surface mounted on 1 in2 copper pad of FR4 board, t<10sec | 1 | ||
| Linear Derating Factor | 0.02 | W/℃ | 1 | ||||
| Forward Transconductance | gfs | 16 | S | VDS=-10V, ID=-7A | 2 | ||
| Gate-Source Charge | Qgs | 3 | nC | ID=-7A, VDS=-24V, VGS=-4.5V | 2 | ||
| Gate-Drain (Miller) Charge | Qgd | 10 | nC | ID=-7A, VDS=-24V, VGS=-4.5V | 2 | ||
| Turn-on Delay Time | td(on) | 8 | ns | VDS=-15V, ID=-1A, RG=3.3Ω, VGS=-10V | 2 | ||
| Rise Time | tr | 6.6 | ns | VDS=-15V, ID=-1A, RG=3.3Ω, VGS=-10V | 2 | ||
| Turn-off Delay Time | td(off) | 44 | ns | VDS=-15V, ID=-1A, RG=3.3Ω, VGS=-10V | 2 | ||
| Fall Time | tf | 34 | ns | VDS=-15V, ID=-1A, RG=3.3Ω, VGS=-10V | 2 | ||
| Output Capacitance | Coss | 195 | pF | VGS=0V, VDS=-25V, f=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 190 | pF | VGS=0V, VDS=-25V, f=1.0MHz | 2 | ||
| Reverse Recovery Time | trr | 28 | ns | IS=-7A, VGS=0V, dI/dt=100A/µs | 2 | ||
| Reverse Recovery Charge | Qrr | 18 | nC | IS=-7A, VGS=0V, dI/dt=100A/µs | 2 |
CAD (KiCad official)
- Symbol:
AO4419-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
ao4419-hxy-etched.step/ao4419-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao4419-hxy.step/ao4419-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
cfac99405b332f63, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).