component
SI2333-TP
Public Made by Adomby adom
MCC Micro Commercial Components MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI2333-TP
MCC Micro Commercial Components · MOSFETs · SOT-23
SI2333-TP from MCC Micro Commercial Components, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the P-channel MOSFET, with a gate-source voltage rating of ±8 V (VGS) in the Maximum Ratings table. |
| 2 | SOURCE | passive | Source terminal of the P-channel MOSFET, rated with drain-source voltage VDS = -12 V and gate-source voltage VGS = ±8 V. |
| 3 | DRAIN | passive | Drain terminal of the P-channel MOSFET, rated for continuous drain current ID = -6.0 A and pulsed drain current IDM = -20 A (Note 1). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MCC Micro Commercial Components |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -12 | V | 1 | |||
| Gate-Source Voltage | VGS | -8 | 8 | V | 1 | ||
| Drain Current-Continuous | ID | -6 | A | Note 1 | 1 | ||
| Drain Current-Pulse | IDM | -20 | A | 1 | |||
| Total Power Dissipation | PD | 1.1 | W | Note 1 | 1 | ||
| Total Power Dissipation | PD | 0.35 | W | Note 2 | 1 | ||
| Operating Junction Temperature Range | -55 | 150 | °C | 1 | |||
| Storage Temperature Range | -55 | 150 | °C | 1 | |||
| Thermal Resistance Junction to Ambient | 113 | °C/W | Note 1 | 1 | |||
| Thermal Resistance Junction to Ambient | 357 | °C/W | Note 2 | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | -12 | V | VGS=0V, ID=-250µA | 2 | ||
| Gate-Threshold Voltage | VGS(th) | -0.4 | -1 | V | VDS=VGS, ID=-250µA | 2 | |
| Gate-Body Leakage Current | IGSS | -0.1 | 0.1 | µA | VGS =± 8V, VDS =0V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS =-12V, VGS =0V | 2 | ||
| Drain-Source On-Resistance | RDS(on) | 28 | mΩ | VGS=-4.5V, ID=-5.0A | 2 | ||
| Drain-Source On-Resistance | RDS(on) | 32 | mΩ | VGS=-3.7V, ID=-4.6A | 2 | ||
| Drain-Source On-Resistance | RDS(on) | 40 | mΩ | VGS=-2.5V, ID=-4.3A | 2 | ||
| Drain-Source On-Resistance | RDS(on) | 63 | mΩ | VGS=-1.8V, ID=-1.0A | 2 | ||
| Drain-Source On-Resistance | RDS(on) | 150 | mΩ | VGS=-1.5V, ID=-0.5A | 2 | ||
| Forward Transconductance | gFS | 18 | S | VDS=-5V, ID=-5.0A | 2 | ||
| Diode Forward Voltage | VSD | -1.4 | V | VGS=0V, IS=-4A | 2 | ||
| Input Capacitance | Ciss | 1275 | pF | VDS=-6V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 255 | pF | VDS=-6V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 236 | pF | VDS=-6V, VGS=0V, f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
SI2333-TP - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2333-tp-etched.step/si2333-tp-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2333-tp.step/si2333-tp.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MCC Micro Commercial Components datasheet (4 pp, sha256
01881d0475a273dd, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).