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SS8550-H

Public Made by Adom

by adom

Yangzhou Yangjie Elec Tech Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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SS8550-H

Yangzhou Yangjie Elec Tech · Bipolar (BJT) · SOT-23

SS8550-H from Yangzhou Yangjie Elec Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the PNP transistor; the datasheet gives VEBO of -5.0 V and a base-emitter saturation voltage of max -1.2 V at IC=-800 mA, IB=-80 mA.
2 E passive Emitter of the PNP transistor; the datasheet gives VEBO of -5.0 V (IE=-100 uA, IC=0) and an emitter-base cut-off current of -100 nA at VEB=-5.0 V.
3 C passive Collector of the PNP transistor; the datasheet gives VCEO of -25 V, VCBO of -40 V and a collector current IC of -1.5 A.

Key specifications

Parameter Value
Manufacturer Yangzhou Yangjie Elec Tech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DC Current Gain (rank H, 200-350) hFE 200 350 Classification Of hFE(1), rank H, IC=-100mA VCE=-1.0Vdc 2
DC Current Gain hFE 120 350 IC=-100mA VCE=-1.0Vdc 2
DC Current Gain hFE 40 IC=-800mA VCE=-1.0Vdc 2
Collector-Emitter Saturation Voltage VCE(sat) -0.5 Vdc IC=-800mA IB=-80mA 2
Base-Emitter Saturation Voltage VBE(sat) -1.2 Vdc IC=-800mA IB=-80mA 2
Transition frequency fT 100 MHz IC=-50mAdc, VCE=-10Vdc, f=30MHz 2
Collector-Emitter Cut-off Current ICEO -100 nAdc VCE=-20Vdc 1
Collector-Base Cut-off Current ICBO -100 nAdc VCB=-40Vdc 1
Emitter-Base Cut-off Current IEBO -100 nAdc VEB=-5.0Vdc 1
Collector-Emitter Voltage VCEO -25 V IC=-100uAdc, IB=0 1
Collector-Base Voltage VCBO -40 V IC=-100uAdc, IE=0 1
Emitter-Base Voltage VEBO -5 V IE=-100uAdc, IC=0 1
Collector Current IC -1.5 A 1
Collector Power Dissipation PC 300 mW 1
Operation Junction Temperature Tj -55 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing PC Emitter-Base cut-off current IEB0 nAdc VEB=-5.0Vdc -100 Collector Power Dissipation PC mW 300 1

CAD (KiCad official)

  • Symbol: SS8550-H
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: ss8550-h-etched.step / ss8550-h-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ss8550-h.step / ss8550-h.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Yangzhou Yangjie Elec Tech datasheet (5 pp, sha256 7dd42e65562d5f8b, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF