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BC559BTA

Public Made by Adom

by adom

onsemi Bipolar Transistors - BJT, TO-92-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

markdown

BC559BTA

onsemi · Bipolar Transistors - BJT · TO-92-3

BC559BTA from onsemi, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Collector passive Collector terminal; for the BC559 the datasheet gives VCBO of -30 V, VCEO of -30 V and a DC collector current of -100 mA (peak pulse -200 mA).
2 Base passive Base terminal; the datasheet gives a peak base current (pulse) rating of -200 mA.
3 Emitter passive Emitter terminal; the datasheet gives an emitter-base voltage rating of -5 V.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-92-3
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage (BC559) VCBO -30 V 3
Collector-Emitter Voltage (BC559) VCEO -30 V 3
Emitter-Base Voltage VEBO -5 V 3
Collector Current (DC) IC -100 mA 3
Peak Collector Current (Pulse) ICP -200 mA 3
Peak Base Current (Pulse) IBP -200 mA 3
Junction Temperature TJ 150 °C 3
Storage Temperature Range TSTG -65 150 °C 3
Total Power Dissipation PD 500 mW 3
Thermal Resistance, Junction-to-Ambient RθJA 250 °C/W 3
Collector Cut-Off Current ICBO -15 nA VCB = -30 V, IE = 0 4
DC Current Gain hFE 110 800 VCE = -5 V, IC = -2 mA 4
DC Current Gain hFE classification, grade B hFE 200 450 4
Collector-Emitter Saturation Voltage VCE(sat) -90 -300 mV IC = -10 mA, IB = -0.5 mA 4
Collector-Emitter Saturation Voltage VCE(sat) -250 -650 mV IC = -100 mA, IB = -5 mA 4
Collector-Base Saturation Voltage VBE(sat) -700 mV IC = -10 mA, IB = -0.5 mA 4
Collector-Base Saturation Voltage VBE(sat) -900 mV IC = -100 mA, IB = -5 mA 4
Base-Emitter On Voltage VBE(on) -600 -660 -750 mV VCE = -5 V, IC = -2 mA 4
Base-Emitter On Voltage VBE(on) -800 mV VCE = -5 V, IC = -10 mA 4
Current Gain Bandwidth Product fT 150 MHz VCE = -5 V, IC = -10 mA, f = 10 MHz 4
Output Capacitance Cob 6 pF VCB = -10 V, IE = 0, f = 1 MHz 4
Noise Figure (BC559/BC560 row) NF 1 4 dB VCE = -5 V, IC = -200 μA, f = 1 kHz, RG = 2 kΩ 4
Noise Figure (BC559, wideband) NF 1.2 4 dB VCE = -5 V, IC = -200 μA, RG = 2 kΩ, f = 30 to 15000 MHz 4

CAD (KiCad official)

  • Symbol: BC559BTA
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92-3 (KiCad packages3D, STEP)
  • 3D model files: bc559bta-etched.step / bc559bta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc559bta.step / bc559bta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (10 pp, sha256 325fc5c136bc1776, retrieved 2026-10-28, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF