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Contents

README

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TSM650P03CX RFG

Taiwan Semiconductor · MOSFETs · SOT-23

TSM650P03CX RFG from Taiwan Semiconductor, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the P-channel MOSFET, rated for a gate-source voltage VGS of ±12 V (absolute maximum ratings).
2 Source passive Source terminal of the P-channel MOSFET; the integral reverse diode is rated for a maximum continuous forward current IS of -4.1 A.
3 Drain passive Drain terminal of the P-channel MOSFET, rated for a drain-source voltage VDS of -30 V and a continuous drain current ID of -4.1 A at TC = 25°C.

Key specifications

Parameter Value
Manufacturer Taiwan Semiconductor
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID -4.1 A TC = 25°C 1
Continuous Drain Current ID -2.6 A TC = 100°C 1
Pulsed Drain Current IDM -16.4 A Note 1: pulse width limited by safe operating area 1
Power Dissipation PD 1.56 W TC = 25℃ 1
Operating Junction Temperature TJ 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Thermal Resistance - Junction to Ambient RӨJA 80 °C/W 1
Drain-Source Breakdown Voltage BVDSS -30 V VGS = 0V, ID = -250µA 2
Drain-Source On-State Resistance RDS(on) 55 65 mΩ VGS = -10V, ID = -4A 2
Drain-Source On-State Resistance RDS(on) 65 75 mΩ VGS = -4.5V, ID = -3A 2
Drain-Source On-State Resistance RDS(on) 85 100 mΩ VGS = -2.5V, ID = -2A 2
Gate Threshold Voltage VGS(TH) -0.4 -0.7 -0.9 V VDS = VGS, ID = -250µA 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -30V, VGS = 0V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = -24V, TJ = 125°C 2
Gate Body Leakage IGSS -100 100 nA VGS = ±12V, VDS = 0V 2
Maximum Continuous Drain-Source Diode Forward Current IS -4.1 A Integral reverse diode in the MOSFET 2
Maximum Pulse Drain-Source Diode Forward Current ISM -16.4 A 2
Diode-Source Forward Voltage VSD -1 V VGS = 0V, IS = -1A 2

CAD (KiCad official)

  • Symbol: TSM650P03CX RFG
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: tsm650p03cx-rfg-etched.step / tsm650p03cx-rfg-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tsm650p03cx-rfg.step / tsm650p03cx-rfg.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Taiwan Semiconductor datasheet (5 pp, sha256 12f4625e0380beb5, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF