component
SP60P05GTQ
Public Made by Adomby adom
Siliup MOSFETs, TO-220-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSP60P05GTQ
Siliup · MOSFETs · TO-220-3L
SP60P05GTQ from Siliup, in a TO-220-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the gate-source voltage is rated VGS ±20 V in the absolute maximum ratings. |
| 2 | D | passive | Drain terminal; the drain-source voltage is rated VDS -60 V and the continuous drain current is rated ID -130 A at Tc=25°C. |
| 3 | S | passive | Source terminal; the datasheet gives no source-specific electrical limits beyond the device ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Siliup |
| Package | TO-220-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | Ta=25℃ | 2 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | Ta=25℃ | 2 | |
| Continuous Drain Current (Tc=25°C) | ID | -130 | A | Tc=25°C | 2 | ||
| Continuous Drain Current (Tc=100°C) | ID | -87 | A | Tc=100°C | 2 | ||
| Pulse Drain Current Tested | IDM | -520 | A | Ta=25℃ | 2 | ||
| Single pulsed avalanche energy | EAS | 1092 | mJ | VDD=-30V, VGS=-10V, L=0.5mH, Rg=25Ω | 2 | ||
| Maximum Power Dissipation (Tc=25°C) | PD | 153 | W | Tc=25°C | 2 | ||
| Maximum Power Dissipation (Tc=100°C) | PD | 61 | W | Tc=100°C | 2 | ||
| Thermal Resistance-Junction to Case | RθJC | 0.82 | ℃/W | 2 | |||
| Maximum Junction Temperature (row label; symbol TSTG as printed) | TSTG | -55 | 150 | ℃ | 2 | ||
| Storage Temperature Range (row label; symbol TJ as printed) | TJ | -55 | 150 | ℃ | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V , ID=-250uA | 2 | ||
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-48V , VGS=0V , TJ=25℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.6 | -2 | -2.5 | V | VGS=VDS , ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 5.8 | 7.3 | mΩ | VGS=-10V , ID=-30A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 8 | 10.5 | mΩ | VGS=-4.5V , ID=-30A | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 2 | ||
| Diode Continuous Current | IS | -130 | A | Ta=25℃ | 2 |
CAD (KiCad official)
- Symbol:
SP60P05GTQ - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220-3L (KiCad packages3D, STEP)
- 3D model files:
sp60p05gtq-etched.step/sp60p05gtq-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sp60p05gtq.step/sp60p05gtq.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Siliup datasheet (8 pp, sha256
937412e7c146332a, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).