component
HSM9926
Public Made by Adomby adom
HUASHUO MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownHSM9926
HUASHUO · MOSFETs · SOP-8
HSM9926 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1; drain-source voltage rated 20 V. |
| 2 | G1 | input | Gate of MOSFET 1; gate-source voltage limited to ±12 V, threshold 0.6 to 1.5 V. |
| 3 | S2 | passive | Source of MOSFET 2; drain-source voltage rated 20 V. |
| 4 | G2 | input | Gate of MOSFET 2; gate-source voltage limited to ±12 V, threshold 0.6 to 1.5 V. |
| 5 | D2 | passive | Drain of MOSFET 2; continuous current 6 A at TA=25℃, pulsed 24 A, RDS(ON) max 28 mΩ at VGS=4.5V. |
| 6 | D2 | passive | Drain of MOSFET 2, internally common with pin 5; continuous current 6 A at TA=25℃, pulsed 24 A. |
| 7 | D1 | passive | Drain of MOSFET 1; continuous current 6 A at TA=25℃, pulsed 24 A, RDS(ON) max 28 mΩ at VGS=4.5V. |
| 8 | D1 | passive | Drain of MOSFET 1, internally common with pin 7; continuous current 6 A at TA=25℃, pulsed 24 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | 12 | V | 1 | |||
| Continuous Drain Current | ID | 6 | A | TA=25℃, VGS @ 10V | 1 | ||
| Continuous Drain Current | ID | 4 | A | TA=70℃, VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 24 | A | 1 | |||
| Total Power Dissipation | PD | 1.3 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 62.5 | ℃/W | Surface mounted on 1 inch² FR-4 board with 2OZ copper (note 1) | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 22 | 28 | mΩ | VGS=4.5V, ID=6A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 34 | 44 | mΩ | VGS=2.5V, ID=5.2A | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.6 | 0.9 | 1.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=20V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=20V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V, VDS=0V | 2 |
CAD (KiCad official)
- Symbol:
HSM9926 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
hsm9926-etched.step/hsm9926-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsm9926.step/hsm9926.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
cd3a8b305e160f9e, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).