component
VBE2202K
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownVBE2202K
VBsemi Elec · MOSFETs · TO-252
VBE2202K from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is limited to ±20 V (VGS). |
| 2 | D | passive | Drain, connected to the tab; continuous drain current is -3.6 A at TC = 25 °C with VGS at -10 V. |
| 3 | S | passive | Source terminal; drain-source voltage rating is -200 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | -200 | V | VGS = 0, ID = -250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -4 | -1.5 | V | VDS = VGS, ID = -250 μA | 2 | |
| Gate-Source Leakage | IGSS | -10 | 10 | μA | VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -100 | μA | VDS = -200 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current (125 °C) | IDSS | -500 | μA | VDS = -160 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Forward Transconductance | gfs | 2.8 | S | VDS = -50 V, ID = -1.0 A | 2 | ||
| Gate Input Resistance | Rg | 0.6 | 3.7 | Ω | f = 1 MHz, open drain | 2 | |
| Continuous Source-Drain Diode Current | IS | -3.5 | A | 2 | |||
| Pulsed Diode Forward Current | ISM | -6 | A | 2 | |||
| Body Diode Voltage | VSD | -6.5 | V | TJ = 25 °C, IS = -3.5A, VGS = 0 V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 200 | 300 | ns | TJ = 25 °C, IF = -3.5A, dI/dt = 100 A/μs | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 1.9 | 2.9 | μC | TJ = 25 °C, IF = -3.5A, dI/dt = 100 A/μs | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 2 | Ω | VGS = -10 V, ID = -1.0 A | 2 | ||
| VDS Temperature Coefficient | ΔVDS/TJ | -0.24 | V/°C | Reference to 25 °C, ID = -1 mA | 2 | ||
| Input Capacitance | Ciss | 700 | pF | VGS = 0 V, VDS = -25 V, f = 1.0 MHz | 2 | ||
| Output Capacitance | Coss | 200 | pF | VGS = 0 V, VDS = -25 V, f = 1.0 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 40 | pF | VGS = 0 V, VDS = -25 V, f = 1.0 MHz | 2 | ||
| Total Gate Charge | Qg | 29 | nC | VGS = -10 V, ID = -3.5A, VDS = -160 V | 2 | ||
| Gate-Source Charge | Qgs | 5.4 | nC | VGS = -10 V, ID = -3.5A, VDS = -160 V | 2 | ||
| Gate-Drain Charge | Qgd | 15 | nC | VGS = -10 V, ID = -3.5A, VDS = -160 V | 2 | ||
| Turn-On Delay Time | td(on) | 12 | ns | VDD = -100 V, ID = -3.5A, Rg = 12 Ω, RD = 15 Ω | 2 | ||
| Rise Time | tr | 27 | ns | VDD = -100 V, ID = -3.5A, Rg = 12 Ω, RD = 15 Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 28 | ns | VDD = -100 V, ID = -3.5A, Rg = 12 Ω, RD = 15 Ω | 2 | ||
| Fall Time | tf | 24 | ns | VDD = -100 V, ID = -3.5A, Rg = 12 Ω, RD = 15 Ω | 2 | ||
| Internal Drain Inductance | LD | 4.5 | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 | ||
| Internal Source Inductance | LS | 7.5 | nH | 2 | |||
| Drain-Source Voltage | VDS | -200 | V | TC = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC = 25 °C | 1 | |
| Continuous Drain Current | ID | -3.6 | A | VGS at -10 V, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | -2.5 | A | VGS at -10 V, TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | -12 | A | 1 | |||
| Linear Derating Factor | 0.59 | W/°C | 1 | ||||
| Linear Derating Factor (PCB mount) | 0.025 | W/°C | 1 | ||||
| Single Pulse Avalanche Energy | EAS | 500 | mJ | VDD = -50 V, starting TJ = 25 °C, L = 17 mH, Rg = 25 Ω, IAS = -6.5 A | 1 | ||
| Avalanche Current | IAR | -6.4 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 7.4 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 74 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation (PCB mount) | PD | 3 | W | TA = 25 °C | 1 | ||
| Peak Diode Recovery dV/dt | dV/dt | -5 | V/ns | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering Recommendations (Peak temperature) | 300 | °C | for 10 s, 1.6 mm from case | 1 | |||
| Maximum Junction-to-Ambient | RthJA | -62 | °C/W | 2 | |||
| Maximum Junction-to-Ambient (PCB mount) | RthJA | -40 | °C/W | When mounted on 1" square PCB (FR-4 or G-10 material) | 2 | ||
| Maximum Junction-to-Case (Drain) | RthJC | -1.7 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
VBE2202K - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
vbe2202k-etched.step/vbe2202k-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);vbe2202k.step/vbe2202k.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
1370a3eff29eb426, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).