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Contents

README

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TPS562243DRLR

Texas Instruments · DC-DC Converters · SOT-563

TPS562243DRLR from Texas Instruments, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VIN power_in Input voltage supply pin, rated 4.2 V to 17 V recommended (4.5 V to 17 V for TPS562246B).
2 SW output Switch node connection between the high-side NFET and low-side NFET; recommended operating range is -1 V to 17 V (DC).
3 GND power_in Ground pin, source terminal of the low-side power NFET and ground for the control circuit; connect the sensitive FB network to this GND at a single point.
4 BST output Supply input for the high-side NFET gate drive circuit; connect a 0.1 µF capacitor between BST and SW.
5 EN input Active-high enable input that must be pulled up to enable the device; recommended input range is -0.1 V to 5.5 V.
6 FB input Converter feedback input, connected to the output voltage through a feedback resistor divider; recommended input range is -0.1 V to 5.5 V.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package SOT-563
Category Power Management (PMIC)
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
VIN Input voltage range VIN 4.2 17 V 5
UVLO VIN undervoltage lockout Wake up VIN voltage UVLO 3.6 3.8 4 V 5
UVLO VIN undervoltage lockout Shut down VIN voltage UVLO 3.2 3.4 3.6 V 5
FB voltage VFB 591 600 609 mV TJ = 25°C, Vin = 4.2 - 17 V 5
FB voltage VFB 588 600 612 mV TJ = -40°C to 125°C, Vin = 4.2 - 17 V 5
Over current threshold (valley current set point) IOCL_LS 2 2.8 3.6 A Valley current set point 5
Negative over current threshold (valley current set point) INOCL 1 1.8 2.5 A Valley current set point 5
EN threshold high-level VEN(ON) 1.15 1.2 1.28 V 6
EN threshold low-level VEN(OFF) 0.93 1 1.05 V 6
UVP trip threshold VUVP 55 60 65 PNCT 6
VIN Input voltage VIN -0.3 19 V 4
Input voltage FB, EN FB, EN -0.3 6 V 4
Input voltage GND GND -0.3 0.3 V 4
Output voltage BST BST -0.3 25 V 4
Output voltage BST (< 20ns) BST -0.3 27 V < 20ns 4
Output voltage SW SW -2 19 V 4
Output voltage SW (< 20ns) SW -6.5 21 V < 20ns 4
Operating junction temperature range TJ -40 150 °C 4
Storage temperature Tstg -55 150 °C 4
Input voltage VIN VIN 4.2 17 V 4
Input voltage FB, EN FB, EN -0.1 5.5 V 4
Input voltage GND GND -0.1 0.1 V 4
Output voltage BST BST -0.1 23 V 4
Output voltage BST (< 20ns) BST -0.1 25 V < 20ns 4
Output voltage SW SW -1 17 V 4
Output voltage SW (< 20ns) SW -6 19 V < 20ns 4
Output Current IO 0 2 A 4
TJ Operating junction temperature TJ -40 125 °C 4
Tstg Storage temperature Tstg -40 150 °C 4
VIN supply current (ECO version) IVIN 110 µA No load, VEN = 1.5 V, non-switching, ECO version 5
VIN shutdown current IINSDN 7 µA VEN = 0 V 5
UVLO VIN undervoltage lockout Hysteresis VIN voltage UVLO 400 mV 5
High-side MOSFET Rds(on) RDS(ON)HI 100 mΩ TJ = 25°C 5
Low-side MOSFET Rds(on) RDS(ON)LO 55 mΩ TJ = 25°C 5
Switching frequency FSW 1280 kHz VOUT = 3.3 V 5
Minimum off-time TOFF(MIN) 100 ns VFB = 0.5 V 5
Minimum on-time TON(MIN) 55 ns 5
EN hysteresis VENHYS 200 mV 6
EN pulldown current IEN 1 uA VEN = 1.5 V 6
Internal soft start time tSS 1.4 ms VOUT from 0 to target value. 6
UVP prop deglitch tUVPDLY 256 us 6
UVP switching time in continuous hiccup mode tUVPON 1.5 ms In continus hiccup mode, the switching time; Hard short, UVP detect 6
UVP non-switching time in continuous hiccup mode tUVPOFF 13 ms In continus hiccup mode, non switching time; Hard short, UVP detect 6
OTP trip threshold TOTP 155 °C 6
OTP hysteresis TOTPHSY 20 °C 6
Junction-to-ambient thermal resistance RθJA 147.4 °C/W 5
Junction-to-ambient thermal resistance on EVM board RθJA_effective 73 °C/W Tested on TPS562243EVM board (2 layer, 2oz copper), TA = 25°C 5
Junction-to-case (top) thermal resistance RθJC(top) 75.7 °C/W 5
Junction-to-board thermal resistance RθJB 32.2 °C/W 5
Junction-to-top characterization parameter ΨJT 2.1 °C/W 5
Junction-to-board characterization parameter YJB 31.8 °C/W 5

CAD (KiCad official)

  • Symbol: TPS562243DRLR
  • Footprint: Package_TO_SOT_SMD:SOT-563
  • 3D model: SOT-563 (KiCad packages3D, STEP)
  • 3D model files: tps562243drlr-etched.step / tps562243drlr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tps562243drlr.step / tps562243drlr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (28 pp, sha256 111a2d7e7b559d53, retrieved 2026-10-18, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF