component
CEM8958-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCEM8958-VB
VBsemi Elec · MOSFETs · SO-8
CEM8958-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel, 30 V, RDS(on) 0.018 Ω at VGS = 10 V). |
| 2 | G1 | input | Gate of MOSFET 1 (N-channel), VGS rated ±20 V. |
| 3 | S2 | passive | Source of MOSFET 2 (P-channel, -30 V, RDS(on) 0.040 Ω at VGS = -10 V). |
| 4 | G2 | input | Gate of MOSFET 2 (P-channel), VGS rated ±20 V. |
| 5 | D2 | passive | Drain of MOSFET 2 (P-channel), tied with pin 6, pulsed drain current 40 A. |
| 6 | D2 | passive | Drain of MOSFET 2 (P-channel), tied with pin 5, pulsed drain current 40 A. |
| 7 | D1 | passive | Drain of MOSFET 1 (N-channel), tied with pin 8, pulsed drain current 40 A. |
| 8 | D1 | passive | Drain of MOSFET 1 (N-channel), tied with pin 7, pulsed drain current 40 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage N-Channel | VDS | 30 | V | TA = 25 °C, N-Channel | 1 | ||
| Drain-Source Voltage P-Channel | VDS | -30 | V | TA = 25 °C, P-Channel | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | N-Channel and P-Channel | 1 | |
| Continuous Drain Current N-Channel | ID | 8 | A | TC = 25 °C, TJ = 150 °C, N-Channel, package limited | 1 | ||
| Continuous Drain Current P-Channel | ID | -8 | A | TC = 25 °C, TJ = 150 °C, P-Channel, package limited | 1 | ||
| Continuous Drain Current N-Channel | ID | 6.8 | A | TC = 70 °C, N-Channel | 1 | ||
| Continuous Drain Current P-Channel | ID | -6.8 | A | TC = 70 °C, P-Channel | 1 | ||
| Continuous Drain Current P-Channel | ID | -6.6 | A | TA = 25 °C, P-Channel, t = 10 s, 1" x 1" FR4 | 1 | ||
| Pulsed Drain Current | IDM | 40 | A | 10 µs pulse width, N-Channel (P-Channel -40) | 1 | ||
| Source-Drain Diode Current | IS | 2.6 | A | TC = 25 °C, N-Channel (P-Channel -2.6) | 1 | ||
| Pulsed Source-Drain Current | ISM | 40 | A | N-Channel (P-Channel -40) | 1 | ||
| Single Pulse Avalanche Current N-Channel | IAS | 10 | A | L = 0.1 mH, N-Channel | 1 | ||
| Single Pulse Avalanche Current P-Channel | IAS | 20 | A | L = 0.1 mH, P-Channel | 1 | ||
| Maximum Power Dissipation | PD | 2 | W | TA = 25 °C, N and P channel, t = 10 s, 1" x 1" FR4 | 1 | ||
| Maximum Power Dissipation | PD | 1.28 | W | TA = 70 °C, N and P channel, t = 10 s, 1" x 1" FR4 | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance N-Channel | RthJA | 50 | 62.5 | °C/W | t ≤ 10 s, N-Channel | 1 | |
| Junction-to-Ambient Thermal Resistance P-Channel | RthJA | 47 | 62.5 | °C/W | t ≤ 10 s, P-Channel | 1 | |
| Junction-to-Foot (Drain) Thermal Resistance N-Channel | RthJF | 30 | 40 | °C/W | Steady state, N-Channel | 1 | |
| Junction-to-Foot (Drain) Thermal Resistance P-Channel | RthJF | 29 | 38 | °C/W | Steady state, P-Channel | 1 | |
| Drain-Source Breakdown Voltage N-Channel | VDS | 30 | V | VGS = 0 V, ID = 250 µA, N-Ch | 2 | ||
| Drain-Source Breakdown Voltage P-Channel | VDS | -30 | V | VGS = 0 V, ID = - 250 µA, P-Ch | 2 | ||
| Gate Threshold Voltage N-Channel | VGS(th) | 1 | 2 | V | VDS = VGS, ID = 250 µA, N-Ch | 2 | |
| Gate Threshold Voltage P-Channel | VGS(th) | -2 | -1 | V | VDS = VGS, ID = - 250 µA, P-Ch | 2 | |
| Gate-Body Leakage N-Channel | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 12 V, N-Ch | 2 | |
| Gate-Body Leakage P-Channel | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 12 V, P-Ch | 2 | |
| Zero Gate Voltage Drain Current N-Channel | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V, N-Ch | 2 | ||
| Zero Gate Voltage Drain Current P-Channel | IDSS | -1 | µA | VDS = - 30 V, VGS = 0 V, P-Ch | 2 | ||
| Zero Gate Voltage Drain Current N-Channel | IDSS | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C, N-Ch | 2 | ||
| Zero Gate Voltage Drain Current P-Channel | IDSS | -10 | µA | VDS = - 30 V, VGS = 0 V, TJ = 55 °C, P-Ch | 2 | ||
| On-State Drain Current N-Channel | ID(on) | 20 | A | VDS = 5 V, VGS = 10 V, N-Ch | 2 | ||
| On-State Drain Current P-Channel | ID(on) | -20 | A | VDS = - 5 V, VGS = - 10 V, P-Ch | 2 | ||
| Drain-Source On-State Resistance P-Channel | RDS(on) | 0.04 | Ω | VGS = - 10 V, ID = - 8 A, P-Ch | 2 | ||
| Drain-Source On-State Resistance N-Channel | RDS(on) | 0.02 | Ω | VGS = 8 V, ID = 6.7 A, N-Ch | 2 | ||
| Drain-Source On-State Resistance P-Channel | RDS(on) | 0.044 | Ω | VGS = - 8 V, ID = - 6.5 A, P-Ch | 2 | ||
| Drain-Source On-State Resistance N-Channel | RDS(on) | 0.024 | Ω | VGS = 4.5 V, ID = 6.6 A, N-Ch | 2 | ||
| Drain-Source On-State Resistance P-Channel | RDS(on) | 0.05 | Ω | VGS = - 4.5 V, ID = - 5 A, P-Ch | 2 | ||
| Gate Resistance N-Channel | Rg | 0.3 | 1 | 2.3 | Ω | f = 1 MHz, N-Ch | 2 |
| Gate Resistance P-Channel | Rg | 1.2 | 5.7 | 9.6 | Ω | f = 1 MHz, P-Ch | 2 |
| Forward Transconductance N-Channel | gfs | 27 | S | VDS = 15 V, ID = 6.8 A, N-Ch | 2 | ||
| Forward Transconductance P-Channel | gfs | 25 | S | VDS = - 15 V, ID = - 6.7 A, P-Ch | 2 | ||
| Turn-On Delay Time P-Channel | td(on) | 10 | 16 | ns | VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω, P-Ch | 3 | |
| Body Diode Voltage N-Channel | VSD | 0.81 | 1.2 | V | IS = 5.4 A, N-Ch | 3 | |
| Body Diode Voltage P-Channel | VSD | -0.77 | -1.2 | V | IS = - 2 A, P-Ch | 3 | |
| Body Diode Reverse Recovery Time P-Channel | trr | 31 | 57 | ns | IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C, P-Ch | 3 | |
| Body Diode Reverse Recovery Charge N-Channel | Qrr | 10 | 17 | nC | IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C, N-Ch | 3 | |
| Body Diode Reverse Recovery Charge P-Channel | Qrr | 29 | 47 | nC | IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C, P-Ch | 3 |
CAD (KiCad official)
- Symbol:
CEM8958-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
cem8958-vb-etched.step/cem8958-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cem8958-vb.step/cem8958-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (14 pp, sha256
a0f7665860f0ebb4, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).