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AO7401-VB

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VBsemi Elec MOSFETs, SOT-323(SC-70). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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AO7401-VB

VBsemi Elec · MOSFETs · SOT-323(SC-70)

AO7401-VB from VBsemi Elec, in a SOT-323(SC-70). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±12 V, with threshold VGS(th) of -0.45 V to -1.5 V at ID = -250 µA.
2 S passive Source of the P-channel MOSFET; body diode continuous current IS is -0.4 A (TC = 25 °C) per the absolute maximum ratings.
3 D passive Drain; drain-source voltage rated -20 V, with continuous drain current of -3.1 A (TC = 25 °C) and pulsed drain current of -6 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-323(SC-70)
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V TA = 25 °C 1
Gate-Source Voltage VGS -12 12 V TA = 25 °C 1
Continuous Drain Current ID -3.1 A TC = 25 °C, TJ = 150 °C 1
Continuous Drain Current ID -1.4 A TA = 25 °C, a, b 1
Continuous Drain Current ID -1.1 A TA = 70 °C, a, b 1
Pulsed Drain Current IDM -6 A 1
Continuous Source-Drain Diode Current IS -0.4 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -0.3 A TA = 25 °C 1
Maximum Power Dissipation PD 0.5 W TC = 25 °C 1
Maximum Power Dissipation PD 0.3 W TC = 70 °C 1
Maximum Power Dissipation PD 0.4 W TA = 25 °C, a, b 1
Operating Junction and Storage Temperature Range TJ, Tstg -50 150 °C 1
Soldering Recommendations (Peak Temperature) 260 °C 1
Maximum Junction-to-Ambient RthJA 250 300 °C/W t ≤ 10 s, a, b 2
Maximum Junction-to-Foot (Drain) RthJF 225 270 °C/W Steady State 2
Drain-Source Breakdown Voltage VDS -20 V VGS = 0 V, ID = -250 µA 2
VDS Temperature Coefficient ΔVDS/TJ -14 mV/°C ID = -250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ 2.4 mV/°C ID = -250 µA 2
Gate-Source Threshold Voltage VGS(th) -0.45 -1.5 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±8 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = -20 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -2 A VDS ≤ -5 V, VGS = -4.5 V 2
Drain-Source On-State Resistance RDS(on) 0.08 Ω VGS = -4.5 V, ID = -1.4 A 2
Drain-Source On-State Resistance RDS(on) 0.1 Ω VGS = -2.5 V, ID = -1.2 A 2
Forward Transconductance gfs 5 S VDS = -5 V, ID = -1.4 A 2
Input Capacitance Ciss 272 pF VDS = -10 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 55 pF VDS = -10 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 44 pF VDS = -10 V, VGS = 0 V, f = 1 MHz 2
Total Gate Charge Qg 4.3 6.5 nC VDS = -10 V, VGS = -4.5 V, ID = -1.4 A 2
Total Gate Charge Qg 2.7 4.1 nC VDS = -10 V, VGS = -2.5 V, ID = -1.4 A 2
Gate-Source Charge Qgs 0.7 nC 2
Gate-Drain Charge Qgd 1 nC 2
Gate Resistance Rg 1.4 7 14 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 12 20 ns VDD = -10 V, RL = 9.1 Ω, ID ≅ -1.1 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise Time tr 20 30 ns VDD = -10 V, RL = 9.1 Ω, ID ≅ -1.1 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 23 35 ns VDD = -10 V, RL = 9.1 Ω, ID ≅ -1.1 A, VGEN = -4.5 V, Rg = 1 Ω 2
Fall Time tf 9 18 ns VDD = -10 V, RL = 9.1 Ω, ID ≅ -1.1 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 5 10 ns VDD = -10 V, RL = 9.1 Ω, ID ≅ -1.1 A, VGEN = -8 V, Rg = 1 Ω 2
Rise Time tr 10 20 ns VDD = -10 V, RL = 9.1 Ω, ID ≅ -1.1 A, VGEN = -8 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 18 27 ns VDD = -10 V, RL = 9.1 Ω, ID ≅ -1.1 A, VGEN = -8 V, Rg = 1 Ω 2
Fall Time tf 7 14 ns VDD = -10 V, RL = 9.1 Ω, ID ≅ -1.1 A, VGEN = -8 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS -2.4 A TC = 25 °C 2
Pulse Diode Forward Current ISM -6 A 2
Body Diode Voltage VSD -0.8 -1.2 V IF = -0.7 A 2
Body Diode Reverse Recovery Time trr 18 27 ns IF = -0.7 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 7 14 nC IF = -0.7 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Reverse Recovery Fall Time ta 7 ns IF = -0.7 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Reverse Recovery Rise Time tb 11 ns IF = -0.7 A, dI/dt = 100 A/µs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: AO7401-VB
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323(SC-70) (KiCad packages3D, STEP)
  • 3D model files: ao7401-vb-etched.step / ao7401-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao7401-vb.step / ao7401-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 d7738ecf21fdd786, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF