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IRF7343QTRPBF-VB

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Contents

README

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IRF7343QTRPBF-VB

VBsemi Elec · MOSFETs · SO-8

IRF7343QTRPBF-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (60 V VDS, 5.3 A at TC = 25 °C).
2 G1 input Gate of the N-channel MOSFET, rated ±20 V VGS maximum.
3 S2 passive Source of the P-channel MOSFET (-60 V VDS).
4 G2 input Gate of the P-channel MOSFET, rated ±20 V VGS maximum.
5 D2 passive Drain of the P-channel MOSFET, tied to pin 6 (-4.9 A at TC = 25 °C).
6 D2 passive Drain of the P-channel MOSFET, tied to pin 5 (-4.9 A at TC = 25 °C).
7 D1 passive Drain of the N-channel MOSFET, tied to pin 8 (5.3 A at TC = 25 °C).
8 D1 passive Drain of the N-channel MOSFET, tied to pin 7 (5.3 A at TC = 25 °C).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
N-Ch Drain-Source Voltage VDS 60 V TA = 25 °C, N-Channel 1
P-Ch Drain-Source Voltage VDS -60 V TA = 25 °C, P-Channel 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
N-Ch Pulsed Drain Current IDM 20 A 10 µs pulse width, N-Channel 1
P-Ch Pulsed Drain Current IDM -25 A 10 µs pulse width, P-Channel 1
N-Ch Continuous Drain Current ID 5.3 A TJ = 150 °C, TC = 25 °C, N-Channel 1
N-Ch Continuous Source Drain Diode Current IS 2.6 A TC = 25 °C, N-Channel 1
P-Ch Continuous Source Drain Diode Current IS -2.8 A TC = 25 °C, P-Channel 1
N-Ch Single Pulse Avalanche Energy EAS 6.1 mJ L = 0.1 mH, N-Channel 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
N-Ch Junction-to-Ambient Thermal Resistance RthJA 55 62.5 °C/W t ≤ 10 s, N-Channel 1
P-Ch Junction-to-Ambient Thermal Resistance RthJA 53 62.5 °C/W t ≤ 10 s, P-Channel 1
N-Ch Junction-to-Foot Thermal Resistance RthJF 33 40 °C/W Steady State, N-Channel 1
P-Ch Junction-to-Foot Thermal Resistance RthJF 30 37 °C/W Steady State, P-Channel 1
N-Ch Drain-Source Breakdown Voltage VDS 60 V VGS = 0 V, ID = 250 µA 2
P-Ch Drain-Source Breakdown Voltage VDS -60 V VGS = 0 V, ID = - 250 µA 2
N-Ch Gate Threshold Voltage VGS(th) 1 3 V VDS = VGS, ID = 250 µA 2
P-Ch Gate Threshold Voltage VGS(th) -1 -3 V VDS = VGS, ID = - 250 µA 2
N-Ch Gate-Body Leakage IGSS 100 nA VDS = 0 V, VGS = ± 20 V 2
P-Ch Gate-Body Leakage IGSS -100 nA VDS = 0 V, VGS = ± 20 V 2
N-Ch Zero Gate Voltage Drain Current IDSS 1 µA VDS = 60 V, VGS = 0 V 2
P-Ch Zero Gate Voltage Drain Current IDSS -1 µA VDS = - 60 V, VGS = 0 V 2
N-Ch Zero Gate Voltage Drain Current (TJ=55 °C) IDSS 10 µA VDS = 60 V, VGS = 0 V, TJ = 55 °C 2
P-Ch Zero Gate Voltage Drain Current (TJ=55 °C) IDSS -10 µA VDS = - 60 V, VGS = 0 V, TJ = 55 °C 2
N-Ch On-State Drain Current ID(on) 20 A VDS ≥ 5 V, VGS = 10 V 2
P-Ch On-State Drain Current ID(on) -25 A VDS ≤ - 5 V, VGS = - 10 V 2
N-Ch Total Gate Charge Qg 13 20 nC VDS = 30 V, VGS = 10 V, ID = 4.3 A 2
P-Ch Total Gate Charge Qg 14.5 22 nC VDS = - 30 V, VGS = - 10 V, ID = - 3.1 A 2
N-Ch Gate Resistance Rg 2 3 Ω f = 1 MHz 2
P-Ch Gate Resistance Rg 14 20 Ω f = 1 MHz 2
N-Ch Turn-On Delay Time (4.5 V) td(on) 15 25 ns VDD = 30 V, RL = 8.8 Ω, ID ≅ 3.4 A, VGEN = 4.5 V, Rg = 1 Ω 3
N-Ch Rise Time (4.5 V) tr 65 100 ns VDD = 30 V, RL = 8.8 Ω, ID ≅ 3.4 A, VGEN = 4.5 V, Rg = 1 Ω 3
N-Ch Turn-Off Delay Time (4.5 V) td(off) 15 25 ns VDD = 30 V, RL = 8.8 Ω, ID ≅ 3.4 A, VGEN = 4.5 V, Rg = 1 Ω 3
N-Ch Fall Time (4.5 V) tf 10 15 ns VDD = 30 V, RL = 8.8 Ω, ID ≅ 3.4 A, VGEN = 4.5 V, Rg = 1 Ω 3
N-Ch Body Diode Voltage VSD 0.8 1.2 V IS = 1.7 A 3
P-Ch Body Diode Voltage VSD -0.8 -1.2 V IS = - 2 A 3
N-Ch Body Diode Reverse Recovery Time trr 30 60 ns IF = 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C 3
P-Ch Body Diode Reverse Recovery Time trr 30 50 ns IF = - 2 A, dI/dt = - 100 A/µs, TJ = 25 °C 3
N-Ch Body Diode Reverse Recovery Charge Qrr 32 50 nC IF = 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C 3
P-Ch Body Diode Reverse Recovery Charge Qrr 35 60 nC IF = - 2 A, dI/dt = - 100 A/µs, TJ = 25 °C 3

CAD (KiCad official)

  • Symbol: IRF7343QTRPBF-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: irf7343qtrpbf-vb-etched.step / irf7343qtrpbf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7343qtrpbf-vb.step / irf7343qtrpbf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (14 pp, sha256 afdd1e49f26ba5aa, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF