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Contents

README

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LBC857ALT1G

LRC · Bipolar (BJT) · SOT-23

LBC857ALT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the PNP transistor; the emitter-base voltage is limited to -5.0 V (VEBO) for the LBC857 series.
2 EMITTER passive Emitter terminal of the PNP transistor; the collector-emitter voltage is limited to -45 V (VCEO) for the LBC857 variant.
3 COLLECTOR passive Collector terminal of the PNP transistor; continuous collector current is limited to -100 mA for the LBC857 series.

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage (LBC857 Series) V(BR)CEO -45 V IC = -10 mA 3
Collector-Emitter Breakdown Voltage (LBC857 Series) V(BR)CES -50 V IC = -10 µA, VEB = 0 3
Collector-Base Breakdown Voltage (LBC857 Series) V(BR)CBO -50 V IC = -10 A (as printed) 3
Emitter-Base Breakdown Voltage (LBC857 Series) V(BR)EBO -5 V IE = -1.0 A (as printed) 3
Collector Cutoff Current ICBO -15 nA VCB = -30 V 3
Collector Cutoff Current ICBO -4 µA VCB = -30 V, TA = 150°C 3
DC Current Gain (A grade) hFE 125 220 420 IC = -2.0 mA, VCE = -5.0 V 3
Collector-Emitter Saturation Voltage VCE(sat) -0.3 V IC = -10 mA, IB = -0.5 mA 3
Collector-Emitter Saturation Voltage VCE(sat) -0.65 V IC = -100 mA, IB = -5.0 mA 3
Base-Emitter Saturation Voltage VBE(sat) -0.7 V IC = -10 mA, IB = -0.5 mA 3
Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC = -100 mA, IB = -5.0 mA 3
Base-Emitter On Voltage VBE(on) -0.6 -0.75 V IC = -2.0 mA, VCE = -5.0 V 3
Base-Emitter On Voltage VBE(on) -0.82 V IC = -10 mA, VCE = -5.0 V 3
Current-Gain - Bandwidth Product fT 100 MHz IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz 3
Output Capacitance Cob 4.5 pF VCB = -10 V, f = 1.0 MHz 3
Noise Figure (LBC856, LBC857, LBC858 Series) NF 10 dB IC = -0.2 mA, VCE = -5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz 3
Collector-Emitter Voltage (LBC857) VCEO -45 V TA = 25°C unless otherwise noted 1
Collector-Base Voltage (LBC857) VCBO -50 V TA = 25°C unless otherwise noted 1
Emitter-Base Voltage VEBO -5 V TA = 25°C unless otherwise noted 1
Collector Current - Continuous IC -100 mAdc TA = 25°C unless otherwise noted 1
Total Device Dissipation, FR-5 Board PD 225 mW FR-5 board (1.0 x 0.75 x 0.062 in), TA = 25°C 1
Thermal Resistance, Junction to Ambient, FR-5 Board RθJA 556 °C/W FR-5 board (1.0 x 0.75 x 0.062 in) 1
Total Device Dissipation, Alumina Substrate PD 300 mW Alumina substrate (0.4 x 0.3 x 0.024 in, 99.5% alumina), TA = 25°C 1
Thermal Resistance, Junction to Ambient, Alumina Substrate RθJA 417 °C/W Alumina substrate (0.4 x 0.3 x 0.024 in, 99.5% alumina) 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: LBC857ALT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: lbc857alt1g-etched.step / lbc857alt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lbc857alt1g.step / lbc857alt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (7 pp, sha256 667156ee2a75173c, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF