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SPP08P06PH-VB
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VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSPP08P06PH-VB
VBsemi Elec · MOSFETs · TO-220AB
SPP08P06PH-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, rated for VGS of ±20 V with a gate threshold VGS(th) of −1.0 V to −3.0 V. |
| 2 | D | passive | Drain of the P-channel MOSFET, rated for VDS of −60 V and continuous drain current ID of −40 A at TC = 25 °C. |
| 3 | S | passive | Source of the P-channel MOSFET, with continuous source (diode conduction) current IS of −30 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 40 | A | TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 30 | A | TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | -90 | A | 1 | |||
| Continuous Source Current (Diode Conduction) | IS | -30 | A | 1 | |||
| Avalanche Current | IAS | 28 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 7.2 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 60 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 2 | W | TA = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient (t ≤ 10 sec) | RthJA | 20 | 25 | °C/W | t ≤ 10 sec | 1 | |
| Junction-to-Ambient (Steady State) | RthJA | 62 | 75 | °C/W | Steady state | 1 | |
| Junction-to-Case | RthJC | 56 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | -60 | V | VGS = 0 V, ID = -250 µA | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -3 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -60 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -50 | µA | VDS = -60 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -150 | µA | VDS = -60 V, VGS = 0 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | -10 | A | VDS = -5 V, VGS = -10 V | 2 | ||
| Drain-Source On-State Resistance | rDS(on) | 62 | mΩ | VGS = -10 V, ID = -5 A | 2 | ||
| Drain-Source On-State Resistance | rDS(on) | 80 | mΩ | VGS = -10 V, ID = -5 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | rDS(on) | 110 | mΩ | VGS = -10 V, ID = -5 A, TJ = 175 °C | 2 | ||
| Drain-Source On-State Resistance | rDS(on) | 74 | mΩ | VGS = -4.5 V, ID = -2 A | 2 | ||
| Forward Transconductance | gfs | 8 | S | VDS = -15 V, ID = -5 A | 2 | ||
| Input Capacitance | Ciss | 1300 | pF | VDS = -25 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 120 | pF | VDS = -25 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 90 | pF | VDS = -25 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Total Gate Charge | Qg | 13 | nC | VDS = -30 V, VGS = -10 V, ID = -8.4 A | 2 | ||
| Gate-Source Charge | Qgs | 2.3 | nC | VDS = -30 V, VGS = -10 V, ID = -8.4 A | 2 | ||
| Gate-Drain Charge | Qgd | 3.2 | nC | VDS = -30 V, VGS = -10 V, ID = -8.4 A | 2 | ||
| Gate Resistance | Rg | 8 | Ω | f = 1 MHz | 2 | ||
| Turn-On Delay Time | td(on) | 5 | 10 | ns | VDD = -30 V, RL = 3.57 Ω, ID ≅ -8.4 A, VGEN = -10 V, RG = 2.5 Ω | 2 | |
| Rise Time | tr | 14 | 25 | ns | VDD = -30 V, RL = 3.57 Ω, ID ≅ -8.4 A, VGEN = -10 V, RG = 2.5 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 15 | 25 | ns | VDD = -30 V, RL = 3.57 Ω, ID ≅ -8.4 A, VGEN = -10 V, RG = 2.5 Ω | 2 | |
| Fall Time | tf | 7 | 12 | ns | VDD = -30 V, RL = 3.57 Ω, ID ≅ -8.4 A, VGEN = -10 V, RG = 2.5 Ω | 2 | |
| Pulsed Current | ISM | -20 | A | 2 | |||
| Forward Voltage | VSD | -0.9 | -1.3 | V | IF = -2 A, VGS = 0 V | 2 | |
| Reverse Recovery Time | trr | 50 | 80 | ns | IF = -8 A, di/dt = 100 A/µs | 2 | |
| Reverse Recovery Charge | Qrr | 80 | 120 | nC | 2 |
CAD (KiCad official)
- Symbol:
SPP08P06PH-VB - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
spp08p06ph-vb-etched.step/spp08p06ph-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);spp08p06ph-vb.step/spp08p06ph-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
7660703d8220a8b3, retrieved 2026-11-02, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).