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Contents

README

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NCEP01ND35AG

Wuxi NCE Power Semiconductor · MOSFETs · DFN5X6-8L

NCEP01ND35AG from Wuxi NCE Power Semiconductor, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (N-channel, VDS 100V, ID 35A).
2 G1 input Gate of MOSFET 1, VGS rated ±20V with threshold 1.2V to 2.8V.
3 S2 passive Source of MOSFET 2 (N-channel, VDS 100V, ID 35A).
4 G2 input Gate of MOSFET 2, VGS rated ±20V with threshold 1.2V to 2.8V.
5 D2 passive Drain of MOSFET 2, VDS rated 100V, tied to pin 6.
6 D2 passive Drain of MOSFET 2, VDS rated 100V, tied to pin 5.
7 D1 passive Drain of MOSFET 1, VDS rated 100V, tied to pin 8.
8 D1 passive Drain of MOSFET 1, VDS rated 100V, tied to pin 7.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package DFN5X6-8L
Category Transistors/Thyristors
Pins 9

CAD (KiCad official)

  • Symbol: NCEP01ND35AG
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5X6-8L (KiCad packages3D, STEP)
  • 3D model files: ncep01nd35ag-etched.step / ncep01nd35ag-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ncep01nd35ag.step / ncep01nd35ag.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (6 pp, sha256 0463e2a7859b2e1e, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF