component
IRFB4115PBF-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRFB4115PBF-HXY
HXY MOSFET · MOSFETs · TO-220
IRFB4115PBF-HXY from HXY MOSFET, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is limited to ±20 V (VGS). |
| 2 | D | passive | Drain terminal; rated for 150 V drain-source voltage and 120 A continuous drain current. |
| 3 | S | passive | Source terminal; continuous source current is rated at 120 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain source voltage | VDS | 150 | V | 1 | |||
| Gate source voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous drain current | ID | 120 | A | 1 | |||
| Pulsed drain current | ID, pulse | 352 | A | 1 | |||
| Power dissipation | PD | 178.6 | W | 1 | |||
| Single pulsed avalanche energy | EAS | 204.8 | mJ | 1 | |||
| Operation and storage temperature | Tstg，Tj | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction-case | RθJC | 0.7 | °C/W | 1 | |||
| Thermal resistance, junction-ambient | RθJA | 52 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 150 | V | VGS = 0V, ID = 250µA | 2 | ||
| Gate-body Leakage Current | lGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 2 | |
| Zero Gate Voltage Drain Current (TJ=25°C) | IDSS | 1 | μA | VDS = 150V, VGS = 0V | 2 | ||
| Zero Gate Voltage Drain Current (TJ=100°C) | IDSS | 100 | μA | VDS = 150V, VGS = 0V | 2 | ||
| Gate-Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | 9.5 | 11.5 | mΩ | VGS = 10V, ID = 20A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | IS = 20A, VGS = 0V | 2 | ||
| Continuous Source Current | IS | 120 | A | TC=25°C | 2 |
CAD (KiCad official)
- Symbol:
IRFB4115PBF-HXY - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
irfb4115pbf-hxy-etched.step/irfb4115pbf-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfb4115pbf-hxy.step/irfb4115pbf-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (7 pp, sha256
3e7a26af4fe6c2a6, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).