component
TISP4350J3BJR-S
Public Made by Adomby adom
BOURNS Thyristor Surge Suppressors (TSS), SMB(DO-214AA). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTISP4350J3BJR-S
BOURNS · Thyristor Surge Suppressors (TSS) · SMB(DO-214AA)
TISP4350J3BJR-S from BOURNS, in a SMB(DO-214AA). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | R | passive | R (ring) terminal, the reference for all measurements, of the bidirectional protector, which stands off VDRM of ±275 V and limits to a breakover voltage V(BO) of ±350 V for the TISP4350J3BJ. |
| 2 | T | passive | T (tip) terminal of the bidirectional protector, which stands off VDRM of ±275 V and limits to a breakover voltage V(BO) of ±350 V for the TISP4350J3BJ, with a holding current of at least ±150 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | BOURNS |
| Package | SMB(DO-214AA) |
| Category | TVS/Fuse/Board Level Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak off-state voltage | VDRM | -275 | 275 | V | 2 | ||
| Repetitive peak off-state current | IDRM | 5 | μA | VD = VDRM, TA = 25 °C | 2 | ||
| Repetitive peak off-state current | IDRM | 10 | μA | VD = VDRM, TA = 85 °C | 2 | ||
| Non-repetitive peak impulse current 2/10 μs | IPPSM | -1000 | 1000 | A | 2/10 μs (GR-1089-CORE, 2/10 μs voltage wave shape) | 2 | |
| Non-repetitive peak impulse current 8/20 μs | IPPSM | -800 | 800 | A | 8/20 μs (IEC 61000-4-5, combination wave generator, 1.2/50 μs voltage wave shape) | 2 | |
| Non-repetitive peak impulse current 10/160 μs | IPPSM | -400 | 400 | A | 10/160 μs (TIA-968-A, 10/160 μs voltage wave shape) | 2 | |
| Non-repetitive peak impulse current 4/250 μs | IPPSM | -370 | 370 | A | 4/250 μs (ITU-T K.20/21, 10/700 μs voltage waveshape, simultaneous) | 2 | |
| Non-repetitive peak impulse current 5/310 μs | IPPSM | -350 | 350 | A | 5/310 μs (ITU-T K.20/21, 10/700 μs voltage wave shape, single) | 2 | |
| Non-repetitive peak impulse current 5/320 μs | IPPSM | -350 | 350 | A | 5/320 μs (TIA-968-A, 9/720 μs voltage waveshape, single) | 2 | |
| Non-repetitive peak impulse current 10/560 μs | IPPSM | -250 | 250 | A | 10/560 μs (TIA-968-A, 10/560 μs voltage wave shape) | 2 | |
| Non-repetitive peak impulse current 10/1000 μs | IPPSM | -200 | 200 | A | 10/1000 μs (GR-1089-CORE, 10/1000 μs voltage wave shape) | 2 | |
| Non-repetitive peak on-state current | ITSM | 50 | A | I 20 ms, 50 Hz (full sine wave) | 2 | ||
| Initial rate of rise of on-state current | di/dt | 800 | A/μs | Linear current ramp. Maximum ramp value < 50 A | 2 | ||
| Junction temperature | TJ | -40 | 150 | °C | 2 | ||
| Storage temperature range | Tstg | -65 | 150 | °C | 2 | ||
| AC Breakover voltage | V(BO) | -350 | 350 | V | dv/dt = ±250 V/ms, RSOURCE = 300 Ω | 2 | |
| Ramp breakover voltage | V(BO) | -364 | 364 | V | dv/dt ≤ ±1000 V/μs, Linear voltage ramp, Maximum ramp value = ±500 V; di/dt = ±20 A/μs, Linear current ramp, Maximum ramp value = ±10 A | 3 | |
| Breakover current | I(BO) | -600 | 600 | mA | dv/dt = ±250 V/ms, RSOURCE = 300 Ω | 3 | |
| Holding current | IH | 150 | 600 | mA | IT = ±5 A, di/dt = ±30 mA/ms | 3 | |
| Critical rate of rise of off-state voltage | dv/dt | -5 | 5 | kV/μs | Linear voltage ramp, Maximum ramp value < 0.85VDRM | 3 | |
| Off-state current | ID | -10 | 10 | μA | VD = ±50 V, TA = 85 °C | 3 | |
| Off-state capacitance | CO | 105 | 125 | pF | f = 1 MHz, Vd = 1 V rms, VD = 0 | 3 | |
| Off-state capacitance | CO | 95 | 115 | pF | f = 1 MHz, Vd = 1 V rms, VD = -1 V | 3 | |
| Off-state capacitance | CO | 90 | 105 | pF | f = 1 MHz, Vd = 1 V rms, VD = -2 V | 3 | |
| Off-state capacitance | CO | 42 | 50 | pF | f = 1 MHz, Vd = 1 V rms, VD = -50 V | 3 | |
| Off-state capacitance | CO | 35 | 40 | pF | f = 1 MHz, Vd = 1 V rms, VD = -100 V | 3 | |
| Junction to ambient thermal resistance | RθJA | 90 | °C/W | EIA/JESD51-3 PCB, IT = ITSM(1000) | 3 |
CAD (KiCad official)
- Symbol:
TISP4350J3BJR-S - Footprint:
Diode_SMD:D_SMB - 3D model: SMB(DO-214AA) (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: BOURNS datasheet (8 pp, sha256
bf6e98073d49479c, retrieved 2026-11-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).