component
SWD030R03VLT
Public Made by Adomby adom
Samwin MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSWD030R03VLT
Samwin · MOSFETs · TO-252
SWD030R03VLT from Samwin, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel MOSFET; the gate-to-source voltage VGS is rated at ±20 V in the absolute maximum ratings. |
| 2 | Drain | passive | Drain of the N-channel MOSFET; drain-to-source voltage is rated at 30 V and continuous drain current at 110 A (TC=25°C), limited by junction temperature with a package limit of 135 A. |
| 3 | Source | passive | Source of the N-channel MOSFET; it is the reference for VDSS and VGS and carries the integral body diode, with continuous source current IS of 110 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Samwin |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to source voltage | VDSS | 30 | V | 1 | |||
| Continuous drain current | ID | 110 | A | @TC=25oC | 1 | ||
| Continuous drain current | ID | 94 | A | @TC=100oC | 1 | ||
| Drain current pulsed | IDM | 440 | A | note 1 | 1 | ||
| Gate to source voltage | VGS | -20 | 20 | V | 1 | ||
| Single pulsed avalanche energy | EAS | 225 | mJ | note 2 | 1 | ||
| Repetitive avalanche energy | EAR | 20 | mJ | note 1 | 1 | ||
| Peak diode recovery dv/dt | dv/dt | 5 | V/ns | note 3 | 1 | ||
| Total power dissipation | PD | 113.6 | W | @TC=25oC | 1 | ||
| Operating junction temperature and storage temperature | TSTG, TJ | -55 | 150 | oC | 1 | ||
| Thermal resistance, junction to case | Rthjc | 1.1 | oC/W | 1 | |||
| Drain to source breakdown voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| Drain to source leakage current | IDSS | 1 | uA | VDS=30V, VGS=0V | 2 | ||
| Drain to source leakage current | IDSS | 50 | uA | VDS=24V, TJ=125oC | 2 | ||
| Gate to source leakage current, forward | IGSS | 100 | nA | VGS=20V, VDS=0V | 2 | ||
| Gate to source leakage current, reverse | IGSS | -100 | nA | VGS=-20V, VDS=0V | 2 | ||
| Gate threshold voltage | VGS(TH) | 1 | 2 | V | VDS=VGS, ID=250uA | 2 | |
| Drain to source on state resistance | RDS(ON) | 4.4 | 5.1 | mΩ | VGS=4.5V, ID=20A, TJ=25oC | 2 | |
| Drain to source on state resistance | RDS(ON) | 3 | 3.6 | mΩ | VGS=10V, ID=25A, TJ=25oC | 2 | |
| Drain to source on state resistance | RDS(ON) | 4.6 | mΩ | VGS=10V, ID=25A, TJ=125oC | 2 | ||
| Continuous source current | IS | 110 | A | Integral reverse p-n junction diode in the MOSFET | 2 | ||
| Pulsed source current | ISM | 440 | A | 2 | |||
| Diode forward voltage drop | VSD | 1.4 | V | IS=45A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
SWD030R03VLT - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
swd030r03vlt-etched.step/swd030r03vlt-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);swd030r03vlt.step/swd030r03vlt.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Samwin datasheet (6 pp, sha256
fd9ba735f390174e, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).