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Contents

README

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STP4407-HXY

HXY MOSFET · MOSFETs · SOP-8

STP4407-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, one of three source pins tied together; drain-source voltage rated -30 V.
2 S passive Source of the P-channel MOSFET, one of three source pins tied together; drain-source voltage rated -30 V.
3 S passive Source of the P-channel MOSFET, one of three source pins tied together; drain-source voltage rated -30 V.
4 G input Gate of the P-channel MOSFET; gate-source voltage rated +/-20 V, threshold -1 V to -3 V at ID=-250uA.
5 D passive Drain of the P-channel MOSFET, one of four drain pins tied together; continuous drain current -11 A at TA=25C.
6 D passive Drain of the P-channel MOSFET, one of four drain pins tied together; continuous drain current -11 A at TA=25C.
7 D passive Drain of the P-channel MOSFET, one of four drain pins tied together; continuous drain current -11 A at TA=25C.
8 D passive Drain of the P-channel MOSFET, one of four drain pins tied together; continuous drain current -11 A at TA=25C.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 12.5 16 mΩ VGS=-10V, ID=-10A 2
Static Drain-Source On-Resistance RDS(ON) 17 21 mΩ VGS=-4.5V, ID=-6A 2
Gate Threshold Voltage VGS(th) -1 -3 V VDS=VGS, ID=-250uA 2
Drain-Source Leakage Current IDSS -10 uA VDS=-24V, VGS=0V 2
Gate-Source Leakage IGSS 100 nA VGS=+20V, VDS=0V 2
Total Gate Charge Qg 28 45 nC ID=-6A, VDS=-15V, VGS=-4.5V 2
Input Capacitance Ciss 2940 4700 pF VGS=0V, VDS=-15V, f=1.0MHz 2
Gate Resistance Rg 6.2 12.4 Ω f=1.0MHz 2
Forward On Voltage VSD -1.2 V IS=-2.1A, VGS=0V 2
Drain Voltage (Drain-Source Voltage rating) VDS -30 V 1
Gate-Source Voltage VGS 20 V 1
Drain Current ID@TA=25℃ -11 A VGS @ 10V 1
Drain Current ID@TA=70℃ -9.1 A VGS @ 10V 1
Pulsed Drain Current IDM -40 A 1
Total Power Dissipation PD@TA=25℃ 2.5 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Maximum Thermal Resistance, Junction-ambient Rthj-a 50 ℃/W 1

CAD (KiCad official)

  • Symbol: STP4407-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: stp4407-hxy-etched.step / stp4407-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stp4407-hxy.step / stp4407-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 3d645f0cf9076b71, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF